Crystallization improvement of Ta 2O 5 thin films by the addition of water vapor

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)73-77
Journal / PublicationJournal of Crystal Growth
Volume274
Issue number1-2
Publication statusPublished - 15 Jan 2005

Abstract

We report that by the addition of water vapor into the working gas, crystalline tantalum pentoxide (Ta 2O 5) thin films can be fabricated at low substrate temperatures. At 500 °C, by the addition of water vapor, the crystallinity of the thin films was obviously improved. The grains with tetragonal structure were clearly observed by AFM. Total transmission greater than 85% was achieved between wavelengths of 400 and 800 nm and the optical absorption edge of the thin films also shifted to smaller wavelength. Our data suggest that the crystallinity of the thin films can be improved and the crystallized temperature can be decreased with the introduction of water vapor in the fabrication process. The effects of water vapor on the crystallization of Ta 2O 5 thin films are discussed in details. © 2004 Elsevier B.V. All rights reserved.

Research Area(s)

  • A1. Crystal structure, B1. Oxides, B2. Dielectric materials