Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Material Science

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Nanowire Material Science
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Thin-Film Transisto... Material Science
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Superlattice Material Science
71
Devices Material Science
28
Materials Material Science
14
Oxide Compound Material Science
14
Chemical Vapor Depo... Material Science
14
Electron Mobility Material Science
14
Carrier Concentrati... Material Science
14
Metal Oxide Material Science
14
Oxygen Vacancy Material Science
14
Field Effect Transi... Material Science

Keyphrases

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Nanowires Keyphrases
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High Performance Keyphrases
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Thin-film Transisto... Keyphrases
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Superlattice Struct... Keyphrases
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Amorphous InGaZnO (... Keyphrases
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Device Performance Keyphrases
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Superlattice Keyphrases
40
Gas Concentration Keyphrases
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Transistor Device Keyphrases
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Carrier Concentrati... Keyphrases
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Electron Mobility Keyphrases
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Oxide Materials Keyphrases
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Highly Crystalline Keyphrases
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Nanowire Devices Keyphrases
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Device Technology Keyphrases
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Crystalline Nature Keyphrases
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Current Ratio Keyphrases
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Device Characterist... Keyphrases
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Parallel Array Keyphrases
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Non-crystalline Mat... Keyphrases
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NWFET Keyphrases
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Oxygen Vacancy Form... Keyphrases
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Practical Utilizati... Keyphrases
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Ambient Pressure Ch... Keyphrases
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Metal Oxide Thin-fi... Keyphrases
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On-state Current Keyphrases

INIS

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nanowires INIS
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performance INIS
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thin films INIS
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transistors INIS
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superlattices INIS
71
devices INIS
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concentration INIS
28
oxides INIS
14
metals INIS
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oxygen INIS
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chemical vapor depo... INIS
14
carriers INIS
14
vacancies INIS
14
applications INIS
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construction INIS
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electron mobility INIS
14
field effect transi... INIS
Research OutputsResearch Output authored by Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors is tagged with the concept