Crystal structures of BaMgF4-xOxn thin films

Xiaoli Wang; Shinobu Fujihara; Toshio Kimura; Haydn Chen

doi:10.1080/00150190108235348

Crystal structures of BaMgF_4-xO_xn thin films

Xiaoli Wang
, Shinobu Fujihara
, Toshio Kimura
, Haydn Chen

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

Abstract

A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified. © 2001 Taylor & Francis.

Original language	English
Pages (from-to)	121-126
Journal	Ferroelectrics
Volume	264
Issue number	1
DOIs	https://doi.org/10.1080/00150190108235348
Publication status	Published - 2001
Event	3rd Asian Meeting on Ferroelectrics, AMF-3 - Hong Kong, China Duration: 12 Dec 2000 → 15 Dec 2000

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Research Keywords

crystal structure
phase transformation
thin film

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10.1080/00150190108235348

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Cite this

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title = "Crystal structures of BaMgF4-xOxn thin films",

abstract = "A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified. {\textcopyright} 2001 Taylor \& Francis.",

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author = "Xiaoli Wang and Shinobu Fujihara and Toshio Kimura and Haydn Chen",

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T1 - Crystal structures of BaMgF4-xOxn thin films

AU - Wang, Xiaoli

AU - Fujihara, Shinobu

AU - Kimura, Toshio

AU - Chen, Haydn

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2001

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N2 - A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified. © 2001 Taylor & Francis.

AB - A chemical deposition method has been employed to synthesize BaMgF 4 thin films. Crystal structures of the grown thin films were found to be sensitive to thermal treatment conditions. Only the thin films heated at 550°C for 1 to 2 hours exhibited BaMgF4-type structure. Surface composition analysis indicated that anions in the thin films contained not only fluorine ions, but oxygen ions as well. The virtual composition of the thin films is thus BaMgF4-xOx/2 instead of BaMgF4. The phase transformation and the crystal structures of BaMgF4-xO x/2 thin films at different synthesized temperatures were investigated. A new cubic structure of BaMgF4-xOx/2 was identified. © 2001 Taylor & Francis.

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KW - phase transformation

KW - thin film

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DO - 10.1080/00150190108235348

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