Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals

F. P. Yu; D. R. Yuan; S. J. Zhang; X. Zhao; S. Y. Guo; X. L. Duan

doi:10.1088/0022-3727/42/8/085112

Crystal growth and characterization of Sr₃TaGa ₃Si₂O₁₄ single crystals

F. P. Yu
, D. R. Yuan
, S. J. Zhang
, X. Zhao
, S. Y. Guo
, X. L. Duan

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

23 Citations (Scopus)

Abstract

High quality piezoelectric single crystals Sr₃TaGa ₃Si₂O₁₄ were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm^-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr ₃TaGa₃Si₂O₁₄ single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d₁₁ = -4.90 pC N^-1, d₁₄ = 3.20 pC N^-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C. © 2009 IOP Publishing Ltd.

Original language	English
Article number	085112
Journal	Journal of Physics D: Applied Physics
Volume	42
Issue number	8
DOIs	https://doi.org/10.1088/0022-3727/42/8/085112
Publication status	Published - 2009
Externally published	Yes

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Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

This work is supported by the National Nature Science Foundation of China (NNSFC No 60678040) and the Foundation from Technology and Industry for National Defense of China.

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Cite this

@article{dc5de5ababcf4567b8f9f75d0f8f70f7,

title = "Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals",

abstract = "High quality piezoelectric single crystals Sr3TaGa 3Si2O14 were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr 3TaGa3Si2O14 single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d11 = -4.90 pC N-1, d14 = 3.20 pC N-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C. {\textcopyright} 2009 IOP Publishing Ltd.",

author = "Yu, \{F. P.\} and Yuan, \{D. R.\} and Zhang, \{S. J.\} and X. Zhao and Guo, \{S. Y.\} and Duan, \{X. L.\}",

note = "Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].",

year = "2009",

doi = "10.1088/0022-3727/42/8/085112",

language = "English",

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journal = "Journal of Physics D: Applied Physics",

issn = "0022-3727",

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TY - JOUR

T1 - Crystal growth and characterization of Sr3TaGa 3Si2O14 single crystals

AU - Yu, F. P.

AU - Yuan, D. R.

AU - Zhang, S. J.

AU - Zhao, X.

AU - Guo, S. Y.

AU - Duan, X. L.

N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

PY - 2009

Y1 - 2009

N2 - High quality piezoelectric single crystals Sr3TaGa 3Si2O14 were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr 3TaGa3Si2O14 single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d11 = -4.90 pC N-1, d14 = 3.20 pC N-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C. © 2009 IOP Publishing Ltd.

AB - High quality piezoelectric single crystals Sr3TaGa 3Si2O14 were grown using the conventional Czochralski method along the Y-axis. The mass density was found to be 5.121 g cm-3 by the Archimedes method. The relative dielectric constants, piezoelectric strain coefficients and elastic compliance constants of Sr 3TaGa3Si2O14 single crystals were determined by an electric bridge and the resonant-antiresonant method at room temperature. The results were , , d11 = -4.90 pC N-1, d14 = 3.20 pC N-1; ; ; ; ; ; and , respectively. The temperature dependent behaviour of elastic compliance constants was also investigated, where zero temperature compensated cuts were not found in the range from -40 to 120 °C. © 2009 IOP Publishing Ltd.

UR - https://www.scopus.com/pages/publications/70350445561

UR - https://www.scopus.com/pages/publications/70350445561#tab=impact

U2 - 10.1088/0022-3727/42/8/085112

DO - 10.1088/0022-3727/42/8/085112

M3 - RGC 21 - Publication in refereed journal

SN - 0022-3727

VL - 42

JO - Journal of Physics D: Applied Physics

JF - Journal of Physics D: Applied Physics

IS - 8

M1 - 085112

ER -