Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

Ruiqing Wang; Jiuren Zhou; Siying Zheng; Feng Zhu; Wenxin Sun; Haiwen Xu; Bochang Li; Yan Liu; Yue Hao; Genquan Han

doi:10.1109/LED.2025.3584071

Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

Ruiqing Wang
, Jiuren Zhou^*
, Siying Zheng^*
, Feng Zhu^*
, Wenxin Sun
, Haiwen Xu
, Bochang Li
, Yan Liu
, Yue Hao
, Genquan Han

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

1 Citation (Scopus)

Abstract

This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (E_BD) to coercive field (E_C) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory. © 2025 IEEE.

Original language	English
Pages (from-to)	1533-1536
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	46
Issue number	9
Online published	30 Jun 2025
DOIs	https://doi.org/10.1109/LED.2025.3584071
Publication status	Published - Sept 2025

Funding

This work was supported in part by the National Science and Technology Major Project under Grant 2022ZD0119002; in part by the Fundamental Research Funds for the Central Universities under Grant YJSJ25013; in part by the National Natural Science Foundation of China under Grant 92264101, Grant 92464205, Grant 62025402, and Grant 62090033; in part by the Major Program of Zhejiang Natural Science Foundation under Grant LD25F040004; and in part by the Postdoctoral Fellowship Program of China Postdoctoral Science Foundation under Grant GZC20241309.

Research Keywords

Cryogenics
Switches
Electric breakdown
Plasma temperature
Temperature distribution
Temperature dependence
Reliability
Electric fields
Fatigue
Nonvolatile memory
Wurtzite ferroelectrics
AlScN
cryogenic temperature
fatigue

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title = "Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics",

abstract = "This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory. {\textcopyright} 2025 IEEE.",

keywords = "Cryogenics, Switches, Electric breakdown, Plasma temperature, Temperature distribution, Temperature dependence, Reliability, Electric fields, Fatigue, Nonvolatile memory, Wurtzite ferroelectrics, AlScN, cryogenic temperature, fatigue",

author = "Ruiqing Wang and Jiuren Zhou and Siying Zheng and Feng Zhu and Wenxin Sun and Haiwen Xu and Bochang Li and Yan Liu and Yue Hao and Genquan Han",

year = "2025",

month = sep,

doi = "10.1109/LED.2025.3584071",

language = "English",

volume = "46",

pages = "1533--1536",

journal = "IEEE Electron Device Letters",

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publisher = "IEEE",

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TY - JOUR

T1 - Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

AU - Wang, Ruiqing

AU - Zhou, Jiuren

AU - Zheng, Siying

AU - Zhu, Feng

AU - Sun, Wenxin

AU - Xu, Haiwen

AU - Li, Bochang

AU - Liu, Yan

AU - Hao, Yue

AU - Han, Genquan

PY - 2025/9

Y1 - 2025/9

N2 - This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory. © 2025 IEEE.

AB - This study presents the first experimental exploration into cryogenic ferroelectric behavior in wurtzite ferroelectrics. A breakdown field (EBD) to coercive field (EC) ratio of 1.8 is achieved even at 4 K, marking the lowest ferroelectric switching temperature reported for wurtzite ferroelectrics. Additionally, a significant evolution in fatigue behavior is captured, transitioning from hard breakdown to ferroelectricity loss at cryogenic temperatures. These findings unlock the feasibility for wurtzite ferroelectrics to advance wide temperature non-volatile memory. © 2025 IEEE.

KW - Cryogenics

KW - Switches

KW - Electric breakdown

KW - Plasma temperature

KW - Temperature distribution

KW - Temperature dependence

KW - Reliability

KW - Electric fields

KW - Fatigue

KW - Nonvolatile memory

KW - Wurtzite ferroelectrics

KW - AlScN

KW - cryogenic temperature

KW - fatigue

UR - https://www.webofscience.com/wos/woscc/full-record/WOS:001565172600034

U2 - 10.1109/LED.2025.3584071

DO - 10.1109/LED.2025.3584071

M3 - RGC 21 - Publication in refereed journal

SN - 0741-3106

VL - 46

SP - 1533

EP - 1536

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Cryogenic Ferroelectric Behavior of Wurtzite Ferroelectrics

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