Cross-sectional transmission electron microscopy of silicon-silicide interfaces

F. Föll; P. S. Ho; K. N. Tu

doi:10.1063/1.328440

Cross-sectional transmission electron microscopy of silicon-silicide interfaces

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Author(s)

F. Föll
P. S. Ho
K. N. Tu

Detail(s)

Original language	English
Pages (from-to)	250-255
Journal / Publication	Journal of Applied Physics
Volume	52
Issue number	1
Publication status	Published - 1981
Externally published	Yes

Link(s)

DOI	DOI https://doi.org/10.1063/1.328440 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-0019516235&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(a5dcee99-4f43-443a-af7b-8dff6f295e15).html

Abstract

The epitaxial interfaces of Si/Pd₂Si, Si/NiSi₂, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross-sectional specimens. Direct lattice imaging was used to image the Si/Pd₂Si and the Si/NiSi₂ interfaces. The Si/Pd₂Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi₂ interface. A twinning relationship between NiSi₂ and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd- and Ni-silicide cases. No evidence for an amorphous interfacial layer has been obtained.

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