Cross-sectional transmission electron microscopy of silicon-silicide interfaces

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)250-255
Journal / PublicationJournal of Applied Physics
Issue number1
Publication statusPublished - 1981
Externally publishedYes


The epitaxial interfaces of Si/Pd2Si, Si/NiSi2, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross-sectional specimens. Direct lattice imaging was used to image the Si/Pd2Si and the Si/NiSi2 interfaces. The Si/Pd2Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi2 interface. A twinning relationship between NiSi2 and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd- and Ni-silicide cases. No evidence for an amorphous interfacial layer has been obtained.

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