Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • H. Wong
  • J. Lou
  • N. W. Cheung
  • E. P. Kvam
  • D. A. Olson
  • J. Washburn

Detail(s)

Original languageEnglish
Pages (from-to)798-800
Journal / PublicationApplied Physics Letters
Volume57
Issue number8
Publication statusPublished - 1990
Externally publishedYes

Abstract

We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×1016 cm-2 after annealing at 1000°C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×1016 cm-2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 Å in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.

Citation Format(s)

Cross-section transmission electron microscopy study of carbon-implanted layers in silicon. / Wong, H.; Lou, J.; Cheung, N. W.; Kvam, E. P.; Yu, K. M.; Olson, D. A.; Washburn, J.

In: Applied Physics Letters, Vol. 57, No. 8, 1990, p. 798-800.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal