Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

H. Wong; J. Lou; N. W. Cheung; E. P. Kvam; K. M. Yu; D. A. Olson; J. Washburn

doi:10.1063/1.103424

Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

H. Wong, J. Lou, N. W. Cheung, E. P. Kvam, K. M. Yu, D. A. Olson, J. Washburn

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

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Abstract

We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×10¹⁶ cm^-2 after annealing at 1000°C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×10¹⁶ cm^-2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 Å in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.

Original language	English
Pages (from-to)	798-800
Journal	Applied Physics Letters
Volume	57
Issue number	8
DOIs	https://doi.org/10.1063/1.103424
Publication status	Published - 1990
Externally published	Yes

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@article{edd524d1200341adb927ef7bd2a3830e,

title = "Cross-section transmission electron microscopy study of carbon-implanted layers in silicon",

abstract = "We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×1016 cm-2 after annealing at 1000°C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×1016 cm-2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 {\AA} in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.",

author = "H. Wong and J. Lou and Cheung, {N. W.} and Kvam, {E. P.} and Yu, {K. M.} and Olson, {D. A.} and J. Washburn",

year = "1990",

doi = "10.1063/1.103424",

language = "English",

volume = "57",

pages = "798--800",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "8",

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TY - JOUR

T1 - Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

AU - Wong, H.

AU - Lou, J.

AU - Cheung, N. W.

AU - Kvam, E. P.

AU - Yu, K. M.

AU - Olson, D. A.

AU - Washburn, J.

PY - 1990

Y1 - 1990

N2 - We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×1016 cm-2 after annealing at 1000°C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×1016 cm-2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 Å in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.

AB - We have used cross-section transmission electron microscopy (XTEM) to study microstructures of carbon-implanted silicon layers after high-temperature annealing. It was found that the threshold dose for extended defect formation was much higher for carbon implantation than for other ion species such as B, P, and O. In 2.4 MeV carbon-implanted layers, no dislocations were formed for doses as high as 2×1016 cm-2 after annealing at 1000°C for 1 h. The threshold was found to be lower for low-energy implantation (100 keV): at a dose of 2×1016 cm-2, when an amorphous layer was formed, microtwins were formed near the projected range upon annealing. Microprecipitates around 50 Å in size were observed in low-energy carbon-implanted samples and the precipitates appeared to be under strain.

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-36549096363&origin=recordpage

U2 - 10.1063/1.103424

DO - 10.1063/1.103424

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 57

SP - 798

EP - 800

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

ER -

Cross-section transmission electron microscopy study of carbon-implanted layers in silicon

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