Critical Effect of Film-Electrode Interface on Enhanced Energy Storage Performance of BaTiO3-BiScO3Ferroelectric Thin Films

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Original languageEnglish
Pages (from-to)4726–4733
Journal / PublicationACS Applied Electronic Materials
Issue number11
Online published27 Oct 2021
Publication statusPublished - 23 Nov 2021


Although lead (Pb)-based ferroelectric thin films are widely used in many electronic devices, alternative Pb-free materials have been widely investigated in recent years to address concerns about Pb toxicity. In this regard, past research has primarily focused on the design of solid solutions of different Pb-free perovskite oxides to obtain optimum properties. However, the effect of a film-electrode interface on the functional properties of thin films of the recently developed Pb-free ferroelectrics has been largely ignored. This is surprising since the quality of the film-electrode's interface is known to inherently affect the crystallinity and growth direction of the overlying film microstructure. Here, we have addressed this important issue for the ferroelectric thin film of BaTiO3-BiScO3 (BSBT), which is attractive for high-temperature capacitor applications. Using high-resolution transmission electron microscopy (TEM) imaging and energy-dispersive X-ray spectroscopy, we show that controlled diffusion of cations and oxygen ions across the film-electrode interface and elimination of a detrimental amorphous layer promotes semiepitaxial growth of the 110-textured BaTiO3-BiScO3 (BSBT) films on a Pt-electrode. The changes at the film-electrode interface prove to be crucial in enhancing the energy density of the BSBT/Pt film heterostructure to a maximum of ~30 J cm-3 and the overall energy efficiency to an impressive 90%. The current results highlight the significance of interfacial diffusion on the functional properties of Pb-free ferroelectric thin films.

Research Area(s)

  • energy storage, ferroelectric materials, interfacial diffusion, texture, thin film

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