Cracking behavior of xerogel silica films on silicon substrates

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • L. A. Chow
  • Y. H. Xu
  • B. Dunn
  • K. N. Tu
  • C. Chiang

Detail(s)

Original languageEnglish
Pages (from-to)2944-2946
Journal / PublicationApplied Physics Letters
Volume73
Issue number20
Publication statusPublished - 1998
Externally publishedYes

Abstract

An analysis of the cracking behavior of sol-gel derived silica, "xerogel," films on silicon substrates is presented. At the onset of film cracking, xerogel films on 〈100〉 Si substrates show a crosshatched crack pattern, while such films on 〈111〉 Si substrates show a random pattern. This is explained by the fact that for an isotropic film the critical film thickness for cracking decreases for increasing substrate compliance. For a 〈100〉 Si wafer, the directions of highest compliance in the plane of the wafer are in the 〈100〉 directions, which lead to cracks in the film parallel to them. A 〈111〉 Si substrate is isotropic in the plane of the wafer and, hence, there is no preferred direction for film cracking. A random pattern is the result. © 1998 American Institute of Physics.

Bibliographic Note

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Citation Format(s)

Cracking behavior of xerogel silica films on silicon substrates. / Chow, L. A.; Xu, Y. H.; Dunn, B. et al.

In: Applied Physics Letters, Vol. 73, No. 20, 1998, p. 2944-2946.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review