Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints

Yifan Yao; Zhunan Lu; Yuxuan An; K. N. Tu; Yingxia Liu

doi:10.1007/s13391-024-00535-7

Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints

Yifan Yao
, Zhunan Lu
, Yuxuan An
, K. N. Tu
, Yingxia Liu^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

6 Citations (Scopus)

82 Downloads (CityUHK Scholars)

Abstract

Electromigration (EM) failure in solder joints is a persistent reliability concern, especially in advanced electronic packaging structures. In this study, we conducted an EM experiment on solder joints with asymmetric under-bump-metallization (UBM) thicknesses. Open failure occurred at the solder joint with no current crowding effect but the highest atomic flux of EM, which is related to Sn grain orientation. Our work tries to reveal a counteracting effect of Sn grain orientation on current crowding and the essential reason for the EM failure mechanism of solder joints. Graphical Abstract: (Figure presented.) © The Author(s) 2024.

Original language	English
Pages (from-to)	134-143
Journal	Electronic Materials Letters
Volume	21
Issue number	1
Online published	30 Nov 2024
DOIs	https://doi.org/10.1007/s13391-024-00535-7
Publication status	Published - Jan 2025

Funding

The authors would like to thank the support from City University of Hong Kong through the start-up grant for newly recruited faculty members (9610566), Research Grants Council Joint Research Scheme (N_CityU141/23), Shenzhen Science and Technology Innovation Commission (SGDX20220530111203025), and the University Grants Committee of the Hong Kong Special Administrative Region, China (C1002-22Y).

Research Keywords

Current crowding
Electromigration
Sn grain orientation
Solder joint

Publisher's Copyright Statement

This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

RGC Funding Information

RGC-funded

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10.1007/s13391-024-00535-7

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@article{9d3361de77334951a069dc1bb115b083,

title = "Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints",

abstract = "Electromigration (EM) failure in solder joints is a persistent reliability concern, especially in advanced electronic packaging structures. In this study, we conducted an EM experiment on solder joints with asymmetric under-bump-metallization (UBM) thicknesses. Open failure occurred at the solder joint with no current crowding effect but the highest atomic flux of EM, which is related to Sn grain orientation. Our work tries to reveal a counteracting effect of Sn grain orientation on current crowding and the essential reason for the EM failure mechanism of solder joints. Graphical Abstract: (Figure presented.) {\textcopyright} The Author(s) 2024.",

keywords = "Current crowding, Electromigration, Sn grain orientation, Solder joint",

author = "Yifan Yao and Zhunan Lu and Yuxuan An and Tu, \{K. N.\} and Yingxia Liu",

year = "2025",

month = jan,

doi = "10.1007/s13391-024-00535-7",

language = "English",

volume = "21",

pages = "134--143",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "1",

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TY - JOUR

T1 - Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints

AU - Yao, Yifan

AU - Lu, Zhunan

AU - An, Yuxuan

AU - Tu, K. N.

AU - Liu, Yingxia

PY - 2025/1

Y1 - 2025/1

N2 - Electromigration (EM) failure in solder joints is a persistent reliability concern, especially in advanced electronic packaging structures. In this study, we conducted an EM experiment on solder joints with asymmetric under-bump-metallization (UBM) thicknesses. Open failure occurred at the solder joint with no current crowding effect but the highest atomic flux of EM, which is related to Sn grain orientation. Our work tries to reveal a counteracting effect of Sn grain orientation on current crowding and the essential reason for the EM failure mechanism of solder joints. Graphical Abstract: (Figure presented.) © The Author(s) 2024.

AB - Electromigration (EM) failure in solder joints is a persistent reliability concern, especially in advanced electronic packaging structures. In this study, we conducted an EM experiment on solder joints with asymmetric under-bump-metallization (UBM) thicknesses. Open failure occurred at the solder joint with no current crowding effect but the highest atomic flux of EM, which is related to Sn grain orientation. Our work tries to reveal a counteracting effect of Sn grain orientation on current crowding and the essential reason for the EM failure mechanism of solder joints. Graphical Abstract: (Figure presented.) © The Author(s) 2024.

KW - Current crowding

KW - Electromigration

KW - Sn grain orientation

KW - Solder joint

UR - https://www.scopus.com/pages/publications/85210738999

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85210738999&origin=recordpage

U2 - 10.1007/s13391-024-00535-7

DO - 10.1007/s13391-024-00535-7

M3 - RGC 21 - Publication in refereed journal

SN - 1738-8090

VL - 21

SP - 134

EP - 143

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -

Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints

Abstract

Funding

Research Keywords

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NSFC: Multi-scale Inverse Design and Experimental Verification of High-entropy Solder

YCRG: Large-scale Lithium Niobate Photonic Integrated Circuits for Neuromorphic Computing

Cite this

Counteracting Effect of Sn Grain Orientation on Current Crowding in Electromigration Failures of Solder Joints

Abstract

Funding

Research Keywords

Publisher's Copyright Statement

RGC Funding Information

Access Output

Other Access Options

Permanent Link

Other Files and Links

Fingerprint

Projects

NSFC: Multi-scale Inverse Design and Experimental Verification of High-entropy Solder

YCRG: Large-scale Lithium Niobate Photonic Integrated Circuits for Neuromorphic Computing

Cite this