本文研究 Si 中间淀积层对 CoSi₂/Si(100) 固相异质外延的影响. 用离子束溅射方法在 Si(100) 衬底上制备了 Co/Si/Ti/Si 多层薄膜结构, 通过快速热退火使多层薄膜发生固相反应. 实验表明, 利用 Co/Si/Ti/Si 固相反应得到的 CoSi₂ 薄膜具有良好的外延特性, 薄膜也具有良好的电学特性和热稳定性. 实验发现在较低温度退火时, 生成 Co₂Ti₄O 之类化合物, 作为扩散阻挡层有利于 CoSi₂ 薄膜的外延. 在多层薄膜结构中加入 Si 非晶层, 既能减少衬底 Si 消耗量,又能保持 CoSi₂ 良好外延特性.

The effect of amorphous Si layer interposed between Co and Ti on CoSi₂/Si heteroepitaxy was studied. Co/Si/Ti/Si multilayer structure was prepared by Ion Beam Sputtering. The solid phase reaction of multilayer was performed by rapid thermal annealing (RTA). The results show that CoSi₂ film obtained by Co/Si/Ti/Si solid phase reaction has good epitaxial characteristic, excellent electric properties and thermal stability. It is found that during the low temperature annealing, ternary compound such as Co₂Ti₄O can be formed. It may act as diffusion barrier which favors the epitaxial growth of CoSi₂ film on Si. The addition of an amorphous Si layer can reduce the consumption of the substrate Si during CoSi₂ formation while good epitaxial characteristic of CoSi₂ on Si is remained.