Co/Si/Ti/Si(100) 多层薄膜固相反应异质外延生长 CoSi薄膜

Heteroepitaxial growth of CoSi2 on Si(100) substrate by Co/Si/Ti/Si multilayer solid phase reaction

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • 屈新萍
  • 李炳宗
  • 茹国平
  • 顾志光
  • 徐鸿涛
  • 莫鸿翔
  • 刘京

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Detail(s)

Original languageChinese (Simplified)
Pages (from-to)641-645
Journal / Publication半导体学报
Volume19
Issue number9
Publication statusPublished - Sept 1998

Abstract

本文研究 Si 中间淀积层对 CoSi2/Si(100) 固相异质外延的影响. 用离子束溅射方法在 Si(100) 衬底上制备了 Co/Si/Ti/Si 多层薄膜结构, 通过快速热退火使多层薄膜发生固相反应. 实验表明, 利用 Co/Si/Ti/Si 固相反应得到的 CoSi2 薄膜具有良好的外延特性, 薄膜也具有良好的电学特性和热稳定性. 实验发现在较低温度退火时, 生成 Co2Ti4O 之类化合物, 作为扩散阻挡层有利于 CoSi2 薄膜的外延. 在多层薄膜结构中加入 Si 非晶层, 既能减少衬底 Si 消耗量,又能保持 CoSi2 良好外延特性.
The effect of amorphous Si layer interposed between Co and Ti on CoSi2/Si heteroepitaxy was studied. Co/Si/Ti/Si multilayer structure was prepared by Ion Beam Sputtering. The solid phase reaction of multilayer was performed by rapid thermal annealing (RTA). The results show that CoSi2 film obtained by Co/Si/Ti/Si solid phase reaction has good epitaxial characteristic, excellent electric properties and thermal stability. It is found that during the low temperature annealing, ternary compound such as Co2Ti4O can be formed. It may act as diffusion barrier which favors the epitaxial growth of CoSi2 film on Si. The addition of an amorphous Si layer can reduce the consumption of the substrate Si during CoSi2 formation while good epitaxial characteristic of CoSi2 on Si is remained.

Citation Format(s)

Co/Si/Ti/Si(100) 多层薄膜固相反应异质外延生长 CoSi薄膜. / 屈新萍; 李炳宗; 茹国平 et al.
In: 半导体学报, Vol. 19, No. 9, 09.1998, p. 641-645.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review