Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021)

Y.F. Mei; Ricky K.Y. Fu; G.G. Siu; Paul K. Chu; Z.M. Li; C.L. Yang; W.K. Ge; Z.K. Tang; W.Y. Cheung; S.P. Wong

doi:10.1016/j.mssp.2005.01.001

Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021)

Y.F. Mei, Ricky K.Y. Fu, G.G. Siu, Paul K. Chu^*, Z.M. Li, C.L. Yang, W.K. Ge, Z.K. Tang, W.Y. Cheung, S.P. Wong

^*Corresponding author for this work

Research output: Journal Publications and Reviews › Erratum

Original language	English
Pages (from-to)	568
Journal	Materials Science in Semiconductor Processing
Volume	8
Issue number	4
Online published	17 Feb 2005
DOIs	https://doi.org/10.1016/j.mssp.2005.01.001
Publication status	Published - Aug 2005

Access Output

10.1016/j.mssp.2005.01.001

Other Access Options

Check CityUHK Library

Permanent Link

Right click to copy link

Cite this

Mei, Y. F., Fu, R. K. Y., Siu, G. G., Chu, P. K., Li, Z. M., Yang, C. L., Ge, W. K., Tang, Z. K., Cheung, W. Y., & Wong, S. P. (2005). Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021). Materials Science in Semiconductor Processing, 8(4), 568. https://doi.org/10.1016/j.mssp.2005.01.001

Mei, Y.F. ; Fu, Ricky K.Y. ; Siu, G.G. et al. / Corrigendum to : “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021). In: Materials Science in Semiconductor Processing. 2005 ; Vol. 8, No. 4. pp. 568.

@article{0304885878714d7f86481f06a8ee4deb,

title = "Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021)",

author = "Y.F. Mei and Fu, {Ricky K.Y.} and G.G. Siu and Chu, {Paul K.} and Z.M. Li and C.L. Yang and W.K. Ge and Z.K. Tang and W.Y. Cheung and S.P. Wong",

year = "2005",

month = aug,

doi = "10.1016/j.mssp.2005.01.001",

language = "English",

volume = "8",

pages = "568",

journal = "Materials Science in Semiconductor Processing",

issn = "1369-8001",

publisher = "Elsevier Ltd.",

number = "4",

}

Mei, YF, Fu, RKY, Siu, GG, Chu, PK, Li, ZM, Yang, CL, Ge, WK, Tang, ZK, Cheung, WY & Wong, SP 2005, 'Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021)', Materials Science in Semiconductor Processing, vol. 8, no. 4, pp. 568. https://doi.org/10.1016/j.mssp.2005.01.001

Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021). / Mei, Y.F.; Fu, Ricky K.Y.; Siu, G.G. et al.
In: Materials Science in Semiconductor Processing, Vol. 8, No. 4, 08.2005, p. 568.

Research output: Journal Publications and Reviews › Erratum

TY - JOUR

T1 - Corrigendum to

T2 - “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021)

AU - Mei, Y.F.

AU - Fu, Ricky K.Y.

AU - Siu, G.G.

AU - Chu, Paul K.

AU - Li, Z.M.

AU - Yang, C.L.

AU - Ge, W.K.

AU - Tang, Z.K.

AU - Cheung, W.Y.

AU - Wong, S.P.

PY - 2005/8

Y1 - 2005/8

UR - http://www.scopus.com/inward/record.url?scp=18144372409&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-18144372409&origin=recordpage

U2 - 10.1016/j.mssp.2005.01.001

DO - 10.1016/j.mssp.2005.01.001

M3 - Erratum

SN - 1369-8001

VL - 8

SP - 568

JO - Materials Science in Semiconductor Processing

JF - Materials Science in Semiconductor Processing

IS - 4

ER -

Mei YF, Fu RKY, Siu GG, Chu PK, Li ZM, Yang CL et al. Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021). Materials Science in Semiconductor Processing. 2005 Aug;8(4):568. Epub 2005 Feb 17. doi: 10.1016/j.mssp.2005.01.001

Corrigendum to: “Growth and visible photoluminescence of highly oriented (1 0 0) zinc oxide film synthesized on silicon by plasma immersion ion implantation”: [Materials Science in Semiconductor Processing 7 (2004) 459–462](DOI 10.1016/j.mssp.2004.09.021)

Access Output

Other Access Options

Permanent Link

Other Files and Links

Growth and visible photoluminescence of highly oriented (100) zinc oxide film synthesized on silicon by plasma immersion ion implantation

Cite this