Correction to “Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications”

Changlin Wu; Jieqiong Zhang; Hei Wong; Jun Liu; Xiao Qin; Lichao Wu; Wenhan Bao; Junhui Duan; Bo Zhao; Anli Yang; Xu Chen

doi:10.1021/acsaelm.6c00761

Correction to “Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications”

Changlin Wu
, Jieqiong Zhang^*
, Hei Wong^*
, Jun Liu
, Xiao Qin
, Lichao Wu
, Wenhan Bao
, Junhui Duan
, Bo Zhao
, Anli Yang
, Xu Chen

^*Corresponding author for this work

Department of Electrical Engineering

Research output: Journal Publications and Reviews › Erratum › peer-review

Abstract

In the original version of this article, Figure 8 was over-reduced during typesetting, leading to improper display of some text within the figure. An enlarged version is provided here as part of this correction. This change does not affect the overall conclusions of the study and has been approved by the authors. Figure 8 High-resolution transmission electron microscopy (HRTEM) images of the InP/Si bonding interface acquired at 200 kV and 500k times magnification. (a) Sample #2, with selected regions analyzed by FFT. The InP portion (upper half) exhibits lattice expansion relative to the standard value, while the Si lattice remains largely consistent. (b) Sample #5, with selected regions of the InP portion analyzed by FFT and IFFT. In this case, both InP and Si lattices are in close agreement with their respective standard values. © 2026 American Chemical Society

Original language	English
Pages (from-to)	4385-4386
Number of pages	2
Journal	ACS Applied Electronic Materials
Volume	8
Issue number	9
Online published	29 Apr 2026
DOIs	https://doi.org/10.1021/acsaelm.6c00761
Publication status	Published - 12 May 2026

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@article{f0084681746c4c1c9049f418a151a01f,

title = "Correction to “Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications”",

abstract = "In the original version of this article, Figure 8 was over-reduced during typesetting, leading to improper display of some text within the figure. An enlarged version is provided here as part of this correction. This change does not affect the overall conclusions of the study and has been approved by the authors. Figure 8 High-resolution transmission electron microscopy (HRTEM) images of the InP/Si bonding interface acquired at 200 kV and 500k times magnification. (a) Sample \#2, with selected regions analyzed by FFT. The InP portion (upper half) exhibits lattice expansion relative to the standard value, while the Si lattice remains largely consistent. (b) Sample \#5, with selected regions of the InP portion analyzed by FFT and IFFT. In this case, both InP and Si lattices are in close agreement with their respective standard values. {\textcopyright} 2026 American Chemical Society",

author = "Changlin Wu and Jieqiong Zhang and Hei Wong and Jun Liu and Xiao Qin and Lichao Wu and Wenhan Bao and Junhui Duan and Bo Zhao and Anli Yang and Xu Chen",

year = "2026",

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day = "12",

doi = "10.1021/acsaelm.6c00761",

language = "English",

volume = "8",

pages = "4385--4386",

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TY - JOUR

T1 - Correction to “Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications”

AU - Wu, Changlin

AU - Zhang, Jieqiong

AU - Wong, Hei

AU - Liu, Jun

AU - Qin, Xiao

AU - Wu, Lichao

AU - Bao, Wenhan

AU - Duan, Junhui

AU - Zhao, Bo

AU - Yang, Anli

AU - Chen, Xu

PY - 2026/5/12

Y1 - 2026/5/12

N2 - In the original version of this article, Figure 8 was over-reduced during typesetting, leading to improper display of some text within the figure. An enlarged version is provided here as part of this correction. This change does not affect the overall conclusions of the study and has been approved by the authors. Figure 8 High-resolution transmission electron microscopy (HRTEM) images of the InP/Si bonding interface acquired at 200 kV and 500k times magnification. (a) Sample #2, with selected regions analyzed by FFT. The InP portion (upper half) exhibits lattice expansion relative to the standard value, while the Si lattice remains largely consistent. (b) Sample #5, with selected regions of the InP portion analyzed by FFT and IFFT. In this case, both InP and Si lattices are in close agreement with their respective standard values. © 2026 American Chemical Society

AB - In the original version of this article, Figure 8 was over-reduced during typesetting, leading to improper display of some text within the figure. An enlarged version is provided here as part of this correction. This change does not affect the overall conclusions of the study and has been approved by the authors. Figure 8 High-resolution transmission electron microscopy (HRTEM) images of the InP/Si bonding interface acquired at 200 kV and 500k times magnification. (a) Sample #2, with selected regions analyzed by FFT. The InP portion (upper half) exhibits lattice expansion relative to the standard value, while the Si lattice remains largely consistent. (b) Sample #5, with selected regions of the InP portion analyzed by FFT and IFFT. In this case, both InP and Si lattices are in close agreement with their respective standard values. © 2026 American Chemical Society

UR - http://www.scopus.com/inward/record.url?scp=105038697871&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-105038697871&origin=recordpage

U2 - 10.1021/acsaelm.6c00761

DO - 10.1021/acsaelm.6c00761

M3 - Erratum

AN - SCOPUS:105038697871

SN - 2637-6113

VL - 8

SP - 4385

EP - 4386

JO - ACS Applied Electronic Materials

JF - ACS Applied Electronic Materials

IS - 9

ER -

Correction to “Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications”

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Room-Temperature High-Performance InP/Si Surface-Activated Wafer Bonding for Electronic-Photonic System Integration Applications

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