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Copper-to-copper direct bonding on highly (111)-oriented nanotwinned copper in no-vacuum ambient

  • Jing-Ye Juang
  • , Chia-Ling Lu
  • , Kuan-Ju Chen
  • , Chao-Chang A. Chen
  • , Po-Ning Hsu
  • , Chih Chen*
  • , K. N. Tu
  • *Corresponding author for this work

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Abstract

A vacuum-free Cu-to-Cu direct bonding by using (111)-oriented and nanotwinned Cu has been achieved. A fast bonding process occurs in 5 min under a temperature gradient between 450 and 100 °C. It is verified by grain growth across the bonded interface. To investigate the grain growth behavior, further annealing in the temperature gradient, as well as in a reversed temperature gradient, was performed. They showed similar recrystallization behavior with de-twinning. To analyze the de-twinning, we recall the classic model of annealing twin formation by Fullman and Fisher as comparison. Our case is opposite to the model of Fullman and Fisher. A mechanism of direct bonding by surface diffusion creep is proposed.
Original languageEnglish
Article number13910
JournalScientific Reports
Volume8
Issue number1
DOIs
Publication statusPublished - 1 Dec 2018
Externally publishedYes

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Publisher's Copyright Statement

  • This full text is made available under CC-BY 4.0. https://creativecommons.org/licenses/by/4.0/

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