Controlled nanoscale doping of semiconductors via molecular monolayers

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Roie Yerushalmi
  • Zachery A. Jacobson
  • Zhiyong Fan
  • Robert L. Alley
  • Ali Javey

Detail(s)

Original languageEnglish
Pages (from-to)62-67
Journal / PublicationNature Materials
Volume7
Issue number1
Publication statusPublished - Jan 2008
Externally publishedYes

Abstract

One of the major challenges towards scaling electronic devices to the nanometre-size regime is attaining controlled doping of semiconductor materials with atomic accuracy, as at such small scales, the various existing technologies suffer from a number of setbacks. Here, we present a novel strategy for controlled, nanoscale doping of semiconductor materials by taking advantage of the crystalline nature of silicon and its rich, self-limiting surface reaction properties. Our method relies on the formation of a highly uniform and covalently bonded monolayer of dopant-containing molecules, which enables deterministic positioning of dopant atoms on the Si surfaces. In a subsequent annealing step, the dopant atoms are diffused into the Si lattice to attain the desired doping profile. We show the versatility of our approach through controlled p- and n-doping of a wide range of semiconductor materials, including ultrathin silicon-on-insulator substrates and nanowires, which are then configured into novel transistor structures. © 2008 Nature Publishing Group.

Citation Format(s)

Controlled nanoscale doping of semiconductors via molecular monolayers. / Ho, Johnny C.; Yerushalmi, Roie; Jacobson, Zachery A. et al.
In: Nature Materials, Vol. 7, No. 1, 01.2008, p. 62-67.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review