Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Author(s)

  • H. P. Ho
  • K. C. Lo
  • J. Li
  • D. T K Kwok
  • J. H. Marsh

Related Research Unit(s)

Detail(s)

Original languageEnglish
Pages (from-to)304-310
Journal / PublicationNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume173
Issue number3
Publication statusPublished - Jan 2001

Abstract

In this paper, the diffusion enhanced intermixing effect in strained InGaAsP multiquantum wells due to plasma immersion ion implantation (PIII) of Ar+ and post-implant annealing is presented. Firstly, we report that a 20 kV Ar+ PIII at a fluency of 1016 cm-2 together with a furnace anneal at 650 °C resulted in an enhanced blue shift in the photoluminescence (PL) peak. It was also found that by varying the Ar+ dose or the implantation energy, we could control the extent of the implantation induced intermixing. For a sample that had half of the surface shielded during implantation, a bandgap step was observed between the implanted and non-implanted regions. Our results indicate that one can use this technique for localized fine-tuning of the bandgap energy, thus demonstrating its potential as a processing step for the fabrication of integrated photonic devices.

Citation Format(s)

Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon. / Ho, H. P.; Lo, K. C.; Chu, P. K.; Chan, K. S.; Li, J.; Kwok, D. T K; Pun, E. Y B; Marsh, J. H.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 173, No. 3, 01.2001, p. 304-310.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal