Controlled growth of ZnO films on Si substrate and N-doping behavior
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Article number | E7.11 |
| Pages (from-to) | 363-367 |
| Journal / Publication | Materials Research Society Symposium Proceedings |
| Volume | 864 |
| Publication status | Published - 2005 |
Conference
| Title | 2005 Materials Research Society Spring Meeting (2005 MRS Spring Meeting) |
|---|---|
| Place | United States |
| City | San Francisco |
| Period | 28 March - 1 April 2005 |
Link(s)
Abstract
ZnO films with orientations of (001), (110), and (100) were fabricated on silicon by different substrate biases at low temperature. Dynamic cathodoluminescence (CL) dependence on electron bombardment revealed unstable Zn-N bonding if N2 was used as a predecessor. CL under various accelerated voltages showed the possible energies of Zn-N. N-related photoluminescence (PL) at low temperature confirmed that nitrogen was released after annealing. These N-doping behaviors agreed to the theoretical calculation. © 2005 Materials Research Society.
Citation Format(s)
Controlled growth of ZnO films on Si substrate and N-doping behavior. / Mei, Y. F.; Fu, Ricky K. Y.; Wang, R. S. et al.
In: Materials Research Society Symposium Proceedings, Vol. 864, E7.11, 2005, p. 363-367.
In: Materials Research Society Symposium Proceedings, Vol. 864, E7.11, 2005, p. 363-367.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 22_Publication in policy or professional journal
