Controllable p-n switching behaviors of GaAs nanowires via an interface effect

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Ning Han
  • Fengyun Wang
  • Jared J. Hou
  • Fei Xiu
  • Alvin T. Hui
  • Takfu Hung

Detail(s)

Original languageEnglish
Pages (from-to)4428-4433
Journal / PublicationACS Nano
Volume6
Issue number5
Publication statusPublished - 22 May 2012

Abstract

Due to the extraordinary large surface-to-volume ratio, surface effects on semiconductor nanowires have been extensively investigated in recent years for various technological applications. Here, we present a facile interface trapping approach to alter electronic transport properties of GaAs nanowires as a function of diameter utilizing the acceptor-like defect states located between the intrinsic nanowire and its amorphous native oxide shell. Using a nanowire field-effect transistor (FET) device structure, p- to n-channel switching behaviors have been achieved with increasing NW diameters. Interestingly, this oxide interface is shown to induce a space-charge layer penetrating deep into the thin nanowire to deplete all electrons, leading to inversion and thus p-type conduction as compared to the thick and intrinsically n-type GaAs NWs. More generally, all of these might also be applicable to other nanowire material systems with similar interface trapping effects; therefore, careful device design considerations are required for achieving the optimal nanowire device performances. © 2012 American Chemical Society.

Research Area(s)

  • Diameter-dependent, Gallium arsenide (GaAs) nanowires, Interface trapping effect, P-n conduction switching, Tunable electronic transport

Citation Format(s)

Controllable p-n switching behaviors of GaAs nanowires via an interface effect. / Han, Ning; Wang, Fengyun; Hou, Jared J. et al.

In: ACS Nano, Vol. 6, No. 5, 22.05.2012, p. 4428-4433.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review