Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization

Kunrong Du; Ziyuan Meng; Yilian Xi; Nana Liu; Jingwei Zhang; Shengjie Xu; Zhijian Shi; Hongrun Zhang; Shan Wang; Haifeng Feng; Weichang Hao; Hui Pan; Shujun Zhang; Yi Du

doi:10.1021/acsami.3c15191

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization

Kunrong Du
, Ziyuan Meng
, Yilian Xi
, Nana Liu
, Jingwei Zhang
, Shengjie Xu
, Zhijian Shi
, Hongrun Zhang
, Shan Wang
, Haifeng Feng^*
, Weichang Hao
, Hui Pan^*
, Shujun Zhang
, Yi Du^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

Abstract

Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg_1/3Nb_2/3O₃-PbTiO₃, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit. © 2024 American Chemical Society

Original language	English
Pages (from-to)	4181-4188
Journal	ACS Applied Materials and Interfaces
Volume	16
Issue number	3
Online published	9 Jan 2024
DOIs	https://doi.org/10.1021/acsami.3c15191
Publication status	Published - 24 Jan 2024
Externally published	Yes

Funding

This work is supported by the National Natural Science Foundation of China (12074021, 12104033, 12004321, 12274016, and 52073006), Natural Science Foundation of Beijing, China (2202026), and the Fundamental Research Funds for the Central Universities (YWF-22-K-101). We acknowledge Laboratory of Microfabrication, Institute of Physics, CAS for device fabrications.

Research Keywords

2D ambipolar semiconductor
data storage device
ferroelectric substrate
hydrogenated germanene
photoelectronic device
scanning probe microscopy

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Du, K., Meng, Z., Xi, Y., Liu, N., Zhang, J., Xu, S., Shi, Z., Zhang, H., Wang, S., Feng, H., Hao, W., Pan, H., Zhang, S., & Du, Y. (2024). Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization. ACS Applied Materials and Interfaces, 16(3), 4181-4188. https://doi.org/10.1021/acsami.3c15191

@article{4157f1f4f79c41a29475971d1f35d72f,

title = "Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization",

abstract = "Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3-PbTiO3, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit. {\textcopyright} 2024 American Chemical Society",

keywords = "2D ambipolar semiconductor, data storage device, ferroelectric substrate, hydrogenated germanene, photoelectronic device, scanning probe microscopy",

author = "Kunrong Du and Ziyuan Meng and Yilian Xi and Nana Liu and Jingwei Zhang and Shengjie Xu and Zhijian Shi and Hongrun Zhang and Shan Wang and Haifeng Feng and Weichang Hao and Hui Pan and Shujun Zhang and Yi Du",

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month = jan,

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doi = "10.1021/acsami.3c15191",

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Du, K, Meng, Z, Xi, Y, Liu, N, Zhang, J, Xu, S, Shi, Z, Zhang, H, Wang, S, Feng, H, Hao, W, Pan, H, Zhang, S & Du, Y 2024, 'Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization', ACS Applied Materials and Interfaces, vol. 16, no. 3, pp. 4181-4188. https://doi.org/10.1021/acsami.3c15191

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization. / Du, Kunrong; Meng, Ziyuan; Xi, Yilian et al.
In: ACS Applied Materials and Interfaces, Vol. 16, No. 3, 24.01.2024, p. 4181-4188.

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

TY - JOUR

T1 - Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization

AU - Du, Kunrong

AU - Meng, Ziyuan

AU - Xi, Yilian

AU - Liu, Nana

AU - Zhang, Jingwei

AU - Xu, Shengjie

AU - Shi, Zhijian

AU - Zhang, Hongrun

AU - Wang, Shan

AU - Feng, Haifeng

AU - Hao, Weichang

AU - Pan, Hui

AU - Zhang, Shujun

AU - Du, Yi

PY - 2024/1/24

Y1 - 2024/1/24

N2 - Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3-PbTiO3, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit. © 2024 American Chemical Society

AB - Precise control of charge carrier type and density of two-dimensional (2D) ambipolar semiconductors is the prerequisite for their applications in next-generation integrated circuits and electronic devices. Here, by fabricating a heterointerface between a 2D ambipolar semiconductor (hydrogenated germanene, GeH) and a ferroelectric substrate (PbMg1/3Nb2/3O3-PbTiO3, PMN-PT), fine-tuning of charge carrier type and density of GeH is achieved. Due to ambipolar properties, proper band gap, and high carrier mobility of GeH, by applying the opposite local bias (±8 V), a lateral polarization in GeH is constructed with a change of work function by 0.6 eV. Besides, the built-in polarization in GeH nanoflake could promote the separation of photoexcited electron-hole pairs, which lead to 4 times enhancement of the photoconductivity after poling by 200 V. In addition, a gradient regulation of the work function of GeH from 4.94 to 5.21 eV by adjusting the local substrate polarization is demonstrated, which could be used for data storage at the micrometer size by forming p-n homojunctions. This work of constructing such heterointerfaces provides a pathway for applying 2D ambipolar semiconductors in nonvolatile memory devices, photoelectronic devices, and next-generation integrated circuit. © 2024 American Chemical Society

KW - 2D ambipolar semiconductor

KW - data storage device

KW - ferroelectric substrate

KW - hydrogenated germanene

KW - photoelectronic device

KW - scanning probe microscopy

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U2 - 10.1021/acsami.3c15191

DO - 10.1021/acsami.3c15191

M3 - RGC 21 - Publication in refereed journal

C2 - 38194269

SN - 1944-8244

VL - 16

SP - 4181

EP - 4188

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 3

ER -

Controllable Modulation of the Electronic Properties of a Two-Dimensional Ambipolar Semiconductor by Interface Ferroelectric Polarization

Abstract

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Research Keywords

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