Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films

L. L. Chen; Z. Z. Ye; J. G. Lu; Paul K. Chu

doi:10.1063/1.2405858

Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films

L. L. Chen, Z. Z. Ye, J. G. Lu, Paul K. Chu

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

38 Citations (Scopus)

Abstract

p -type ZnO thin films have been fabricated by In and N codoping. The carrier type in the In-N codoped ZnO can be controlled by adjusting the growth conditions and good p -type conductivity is obtained at temperatures between 490 and 580 °C. The p -type behavior is improved when a buffer layer is used. The lowest reliable room temperature resistivity is found to be 7.85 cm in the presence of a buffer layer. The ZnO-based homostructural p-n junctions comprising a n-ZnO:In layer on a p-ZnO: (In,N) layer on a buffer layer display apparent electrical rectification in the authors' repeated measurements. © 2006 American Institute of Physics.

Original language	English
Article number	252113
Journal	Applied Physics Letters
Volume	89
Issue number	25
DOIs	https://doi.org/10.1063/1.2405858
Publication status	Published - 2006

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title = "Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films",

abstract = "p -type ZnO thin films have been fabricated by In and N codoping. The carrier type in the In-N codoped ZnO can be controlled by adjusting the growth conditions and good p -type conductivity is obtained at temperatures between 490 and 580 °C. The p -type behavior is improved when a buffer layer is used. The lowest reliable room temperature resistivity is found to be 7.85 cm in the presence of a buffer layer. The ZnO-based homostructural p-n junctions comprising a n-ZnO:In layer on a p-ZnO: (In,N) layer on a buffer layer display apparent electrical rectification in the authors' repeated measurements. {\textcopyright} 2006 American Institute of Physics.",

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year = "2006",

doi = "10.1063/1.2405858",

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volume = "89",

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T1 - Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films

AU - Chen, L. L.

AU - Ye, Z. Z.

AU - Lu, J. G.

AU - Chu, Paul K.

PY - 2006

Y1 - 2006

N2 - p -type ZnO thin films have been fabricated by In and N codoping. The carrier type in the In-N codoped ZnO can be controlled by adjusting the growth conditions and good p -type conductivity is obtained at temperatures between 490 and 580 °C. The p -type behavior is improved when a buffer layer is used. The lowest reliable room temperature resistivity is found to be 7.85 cm in the presence of a buffer layer. The ZnO-based homostructural p-n junctions comprising a n-ZnO:In layer on a p-ZnO: (In,N) layer on a buffer layer display apparent electrical rectification in the authors' repeated measurements. © 2006 American Institute of Physics.

AB - p -type ZnO thin films have been fabricated by In and N codoping. The carrier type in the In-N codoped ZnO can be controlled by adjusting the growth conditions and good p -type conductivity is obtained at temperatures between 490 and 580 °C. The p -type behavior is improved when a buffer layer is used. The lowest reliable room temperature resistivity is found to be 7.85 cm in the presence of a buffer layer. The ZnO-based homostructural p-n junctions comprising a n-ZnO:In layer on a p-ZnO: (In,N) layer on a buffer layer display apparent electrical rectification in the authors' repeated measurements. © 2006 American Institute of Physics.

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U2 - 10.1063/1.2405858

DO - 10.1063/1.2405858

M3 - RGC 21 - Publication in refereed journal

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252113

ER -

Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films

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