Contribution of H ion etching under different substrate bias to the orientation degree of diamond films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)22_Publication in policy or professional journal

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Original languageEnglish
Pages (from-to)421-426
Journal / PublicationMaterials Research Society Symposium - Proceedings
Volume513
Publication statusPublished - 1998

Conference

TitleProceedings of the 1998 MRS Spring Meeting
CitySan Francisco, CA, USA
Period13 - 17 April 1998

Abstract

An etching process of hydrogen ions was performed during the initial growth stage of diamond films. The H+ ion etching was performed by applying a negative substrate bias during a microwave plasma chemical vapor deposition process, using only hydrogen as a reactant gas. The contribution of H+ etching under different substrate bias and for different etching time to the orientation degree of diamond films was investigated by scanning electron microscopy and atomic force microscopy. It was found that an additional H+ etching process had influence on the orientation degree of deposited (001)-oriented diamond films. To achieve a significant improvement of crystal orientation, the bias voltage and etching time should be adjusted concerning to the situation of diamond films.