TY - JOUR
T1 - Contact transport of focused ion beam-deposited Pt to Si nanowires
T2 - From measurement to understanding
AU - Ke, J. J.
AU - Tsai, K. T.
AU - Dai, Y. A.
AU - He, J. H.
PY - 2012/1/30
Y1 - 2012/1/30
N2 - The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10-6 Ω-cm2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.
AB - The Si nanowires (NWs) were contacted by focused ion beam (FIB)-deposited Pt as the Ohmic contacts. Ultralow specific contact resistivity of 1.2 10-6 Ω-cm2 has been measured. Due to the focused ion beam-induced amorphization of Si NWs, contact behavior is explained by diffusion theory, allowing accurate estimation of electron concentration, electron mobility, effective barrier height, and ideality factor. This study can be the guidance to correct measurement and understanding of the contact transport, which is useful for NWs device design and fabrication.
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-84857000699&origin=recordpage
U2 - 10.1063/1.3680251
DO - 10.1063/1.3680251
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 100
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 5
M1 - 053503
ER -