Contact reaction between Si and rare earth metals

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)535-537
Journal / PublicationApplied Physics Letters
Volume38
Issue number7
Publication statusPublished - 1981
Externally publishedYes

Abstract

Reactions between Si and thin films of rare-earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275-900°C have been studied by using x-ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325-400°C), and are stable up to 900°C. The growth does not follow a layered growth mode.

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Citation Format(s)

Contact reaction between Si and rare earth metals. / Thompson, R. D.; Tsaur, B. Y.; Tu, K. N.

In: Applied Physics Letters, Vol. 38, No. 7, 1981, p. 535-537.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review