Contact reaction between Si and rare earth metals
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 535-537 |
| Journal / Publication | Applied Physics Letters |
| Volume | 38 |
| Issue number | 7 |
| Publication status | Published - 1981 |
| Externally published | Yes |
Link(s)
Abstract
Reactions between Si and thin films of rare-earth metals (Gd, Dy, Ho, Er, plus Y and La) in the temperature range of 275-900°C have been studied by using x-ray diffraction and ion backscattering spectrometry. The disilicides of these metals are apparently the first phase to form, forming rapidly within a narrow temperature range (325-400°C), and are stable up to 900°C. The growth does not follow a layered growth mode.
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Citation Format(s)
Contact reaction between Si and rare earth metals. / Thompson, R. D.; Tsaur, B. Y.; Tu, K. N.
In: Applied Physics Letters, Vol. 38, No. 7, 1981, p. 535-537.
In: Applied Physics Letters, Vol. 38, No. 7, 1981, p. 535-537.
Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review
