Contact for shallow junctions
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › peer-review
|Journal / Publication||Thin Solid Films|
|Publication status||Published - 16 Jun 1986|
|Link to Scopus||https://www.scopus.com/record/display.uri?eid=2-s2.0-0022079094&origin=recordpage|
A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated. © 1986.
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