Contact for shallow junctions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

4 Scopus Citations
View graph of relations

Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)71-78
Journal / PublicationThin Solid Films
Volume140
Issue number1
Publication statusPublished - 16 Jun 1986
Externally publishedYes

Abstract

A brief review of the formation process and Schottky behavior of shallow silicide contacts is presented. Both silicon alloys and refractory metal alloys have been explored for shallow silicide formation, and both high (0.85-0.75 eV) and low (0.50-0.40 eV) Schottky contacts have been demonstrated. © 1986.

Bibliographic Note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to lbscholars@cityu.edu.hk.

Citation Format(s)

Contact for shallow junctions. / Tu, K. N.

In: Thin Solid Films, Vol. 140, No. 1, 16.06.1986, p. 71-78.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review