Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C Y Ho; S H Chiu; J J Ke; K T Tsai; Y A Dai; J H Hsu; M L Chang; J H He

doi:10.1088/0957-4484/21/13/134008

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

C Y Ho, S H Chiu, J J Ke, K T Tsai, Y A Dai, J H Hsu, M L Chang, J H He^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρ_c) of 1.54 × 10^{- 6} Ω cm ². Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρ_c. The value of ρ_c lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

Original language	English
Article number	134008
Journal	Nanotechnology
Volume	21
Issue number	13
Online published	8 Mar 2010
DOIs	https://doi.org/10.1088/0957-4484/21/13/134008
Publication status	Published - 2 Apr 2010
Externally published	Yes

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title = "Contact behavior of focused ion beam deposited Pt on p-type Si nanowires",

abstract = "Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρc) of 1.54 × 10- 6 Ω cm 2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρc. The value of ρc lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.",

author = "Ho, {C Y} and Chiu, {S H} and Ke, {J J} and Tsai, {K T} and Dai, {Y A} and Hsu, {J H} and Chang, {M L} and He, {J H}",

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T1 - Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

AU - Ho, C Y

AU - Chiu, S H

AU - Ke, J J

AU - Tsai, K T

AU - Dai, Y A

AU - Hsu, J H

AU - Chang, M L

AU - He, J H

PY - 2010/4/2

Y1 - 2010/4/2

N2 - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρc) of 1.54 × 10- 6 Ω cm 2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρc. The value of ρc lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

AB - Pt contact on p-Si nanowires (NWs) using Ga-ion-induced deposition by a focused ion beam was formed with a specific contact resistance (ρc) of 1.54 × 10- 6 Ω cm 2. Ohmic behavior is caused by Ga-ion-induced amorphization of Si NWs underneath the Pt contact. A very low Schottky barrier height associated with interface states raised from Pt-amorphized Si junction and with an image force induced by the applied bias can be implemented to elucidate ultralow ρc. The value of ρc lower than that of any known contact to Si NWs demonstrates a practical method for integrating NWs in devices and circuits.

UR - http://www.scopus.com/inward/record.url?scp=77949399857&partnerID=8YFLogxK

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-77949399857&origin=recordpage

U2 - 10.1088/0957-4484/21/13/134008

DO - 10.1088/0957-4484/21/13/134008

M3 - RGC 21 - Publication in refereed journal

SN - 0957-4484

VL - 21

JO - Nanotechnology

JF - Nanotechnology

IS - 13

M1 - 134008

ER -

Contact behavior of focused ion beam deposited Pt on p-type Si nanowires

Abstract

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