Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions

C. D. Wang; S. K. Jha; Z. H. Chen; T. W. Ng; Y. K. Liu; M. F. Yuen; Z. Z. Lu; S. Y. Kwok; Juan Antonio J. A. Zapien; I. Bello; C. S. Lee; W. J. Zhang

doi:10.1166/jnn.2012.6211

Author(s)

C. D. Wang
S. K. Jha
Z. H. Chen
T. W. Ng
Y. K. Liu
M. F. Yuen
Z. Z. Lu
S. Y. Kwok
I. Bello

Related Research Unit(s)

Centre of Super-Diamond and Advanced Films

Detail(s)

Original language	English
Pages (from-to)	4560-4563
Journal / Publication	Journal of Nanoscience and Nanotechnology
Volume	12
Issue number	6
Publication status	Published - 2012

Link(s)

DOI	DOI https://doi.org/10.1166/jnn.2012.6211 Final Published version
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Link to Scopus	https://www.scopus.com/record/display.uri?eid=2-s2.0-84863951665&origin=recordpage
Permanent Link	https://scholars.cityu.edu.hk/en/publications/publication(4c27d5cd-ce7a-4dc2-a98d-9e314234873d).html

Abstract

Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at±4 V and a small reverse leakage current ∼ 1 μA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory. Copyright © 2012 American Scientific Publishers. All rights reserved.

Research Area(s)

BDD, P-n Heterojunction, ZnO NRs

Citation Format(s)

[ RIS ] [ BibTeX ]

Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. / Wang, C. D.; Jha, S. K.; Chen, Z. H.; Ng, T. W.; Liu, Y. K.; Yuen, M. F.; Lu, Z. Z.; Kwok, S. Y.; J. A. Zapien, Juan Antonio; Bello, I.; Lee, C. S.; Zhang, W. J.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 6, 2012, p. 4560-4563.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 21_Publication in refereed journal › Not applicable › peer-review

Wang, CD, Jha, SK, Chen, ZH, Ng, TW, Liu, YK, Yuen, MF, Lu, ZZ, Kwok, SY, J. A. Zapien, JA, Bello, I, Lee, CS & Zhang, WJ 2012, 'Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions' Journal of Nanoscience and Nanotechnology, vol. 12, no. 6, pp. 4560-4563. https://doi.org/10.1166/jnn.2012.6211

Wang, C. D., Jha, S. K., Chen, Z. H., Ng, T. W., Liu, Y. K., Yuen, M. F., ... Zhang, W. J. (2012). Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. Journal of Nanoscience and Nanotechnology, 12(6), 4560-4563. https://doi.org/10.1166/jnn.2012.6211

Wang CD, Jha SK, Chen ZH, Ng TW, Liu YK, Yuen MF et al. Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. Journal of Nanoscience and Nanotechnology. 2012;12(6):4560-4563. https://doi.org/10.1166/jnn.2012.6211

Wang, C. D. ; Jha, S. K. ; Chen, Z. H. ; Ng, T. W. ; Liu, Y. K. ; Yuen, M. F. ; Lu, Z. Z. ; Kwok, S. Y. ; J. A. Zapien, Juan Antonio ; Bello, I. ; Lee, C. S. ; Zhang, W. J. / Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. In: Journal of Nanoscience and Nanotechnology. 2012 ; Vol. 12, No. 6. pp. 4560-4563.