Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

6 Scopus Citations
View graph of relations

Author(s)

  • C. D. Wang
  • S. K. Jha
  • Z. H. Chen
  • T. W. Ng
  • Y. K. Liu
  • M. F. Yuen
  • Z. Z. Lu
  • S. Y. Kwok
  • I. Bello

Detail(s)

Original languageEnglish
Pages (from-to)4560-4563
Journal / PublicationJournal of Nanoscience and Nanotechnology
Volume12
Issue number6
Publication statusPublished - 2012

Abstract

Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at±4 V and a small reverse leakage current ∼ 1 μA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory. Copyright © 2012 American Scientific Publishers. All rights reserved.

Research Area(s)

  • BDD, P-n Heterojunction, ZnO NRs

Citation Format(s)

Construction and evaluation of high-quality n-ZnO nanorod/p-diamond heterojunctions. / Wang, C. D.; Jha, S. K.; Chen, Z. H.; Ng, T. W.; Liu, Y. K.; Yuen, M. F.; Lu, Z. Z.; Kwok, S. Y.; J. A. Zapien, Juan Antonio; Bello, I.; Lee, C. S.; Zhang, W. J.

In: Journal of Nanoscience and Nanotechnology, Vol. 12, No. 6, 2012, p. 4560-4563.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal