Abstract
Vertically-aligned ZnO nanorods (NRs) arrays were synthesized by a low-temperature solution method on boron-doped diamond (BDD) films. The morphology, growth direction, and crystallinity of the ZnO NRs were studied by scanning electron microscopy, X-ray diffraction and cathodoluminescence. Electrical characterization of the ZnO NR/BBD heterostructures revealed characteristic p-n junction properties with an on/off ratio of about 50 at±4 V and a small reverse leakage current ∼ 1 μA. Moreover, the junctions showed an ideality factor around 1.0 at a low forward voltage from 0 to 0.3 V and about 2.1 for an increased voltage ranging from 1.2 to 3.0 V, being consistent with that of an ideal diode according to the Sah-Noyce-Shockley theory. Copyright © 2012 American Scientific Publishers. All rights reserved.
| Original language | English |
|---|---|
| Pages (from-to) | 4560-4563 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 12 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 |
Research Keywords
- BDD
- P-n Heterojunction
- ZnO NRs
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