Conformal MoS₂/Silicon Nanowire Array Heterojunction with Enhanced Light Trapping and Effective Interface Passivation for Ultraweak Infrared Light Detection

2D layered materials have attracted considerable attention for fabricating IR photodetectors. However, performance, especially for weak signal detection, of these IR photodetectors is often limited by the low absorbance of the very thin active materials as well as unsuppressed dark currents. Herein, a photodetector with high sensitivity for ultraweak IR signals based on a conformal MoS₂/silicon nanowire array heterojunction with an ultrathin Al₂O₃ interfacial passivation layer is reported. The conformal light-trapping nanoarray structure can greatly enhance broadband IR absorption, while the Al₂O₃ layer can suppress interface carrier recombination effectively and thus lower reverse dark current. The photodetectors exhibit broadband photoresponse ranging from 300 to 1600 nm, low noise current of 0.11 pA Hz^−1/2, large responsivity up to 0.61 A W⁻¹ at zero bias voltage, and high specific detectivity of 10¹¹–10¹² Jones. Significantly, the devices are capable of detecting ultraweak IR signals (e.g., 100 pW at 808 nm and 3 nW at 1310/1550 nm) with high on–off ratios without applying any external bias. This work proposes a new strategy to enhance light absorption of 2D materials and construct high-quality junction based on them, which is promising for low-cost and high-performance optoelectronic devices.