Conductivity enhancement by surface chemistry in silicon nanowires
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 62_Review of books or of software (or similar publications/items) › peer-review
Author(s)
Detail(s)
| Original language | English |
|---|---|
| Pages (from-to) | 177-182 |
| Journal / Publication | Nanoscience and Nanotechnology - Asia |
| Volume | 1 |
| Issue number | 2 |
| Publication status | Published - Dec 2011 |
Link(s)
Abstract
The silicon nanowires (SiNWs) comprise a core-shell structure. Contrasted to conventional volume doping to modulate the transport properties of SiNWs, recent studies have revealed an economic and non-destructive approach to induce doping through surface engineering. In this review, extensive first principles theoretical investigations are presented which revealed the influence of surface passivation and ambience in modulating the conductivity of SiNWs. The theoretical findings rationalize several experimental results and provide useful pointers for tuning the electrical properties of nanomaterials. © 2011 Bentham Science Publishers.
Research Area(s)
- A surface passivation, Adsorbate, Ambience, Carrier concentration, Conductivity, Defect, Delocalization, Doping, Majority, Minority, Nanowire core
Citation Format(s)
Conductivity enhancement by surface chemistry in silicon nanowires. / Zhang, Rui-Qin; Dou, Kun-Peng; de Sarkar, Abir.
In: Nanoscience and Nanotechnology - Asia, Vol. 1, No. 2, 12.2011, p. 177-182.
In: Nanoscience and Nanotechnology - Asia, Vol. 1, No. 2, 12.2011, p. 177-182.
Research output: Journal Publications and Reviews (RGC: 21, 22, 62) › 62_Review of books or of software (or similar publications/items) › peer-review
