TY - GEN
T1 - Computer simulation of metal Ion beam enhanced deposition of metallization for diamond film
AU - Guoqing, Li
AU - Wong, N. B.
AU - Tao, Zhang
AU - Lee, S. T.
AU - Zongxin, Mu
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1999
Y1 - 1999
N2 - A Monte Carlo computer simulation code has been developed to describe the behaves and the growth of multi-layer of Ti/Ni and interface in the ion beam enhanced deposition. At fmt the Ti ion was implanted into the diamond film to make its surface metallized, then the adhesive Ti film was deposited by Ti ion beam enhanced deposition, finally the barriers of Ni film deposited by Ni ion beam enhanced deposition.-The film's composition profile and intermixed layers between Ti film and substrate and between the Ni film and Ti film were investigated using a computer simulation method. It is shown that the metal ion beam enhanced deposition is effective to form a broad mixed layer for increasing the adhesion between metals film and diamond substrate. © 1999 IEEE.
AB - A Monte Carlo computer simulation code has been developed to describe the behaves and the growth of multi-layer of Ti/Ni and interface in the ion beam enhanced deposition. At fmt the Ti ion was implanted into the diamond film to make its surface metallized, then the adhesive Ti film was deposited by Ti ion beam enhanced deposition, finally the barriers of Ni film deposited by Ni ion beam enhanced deposition.-The film's composition profile and intermixed layers between Ti film and substrate and between the Ni film and Ti film were investigated using a computer simulation method. It is shown that the metal ion beam enhanced deposition is effective to form a broad mixed layer for increasing the adhesion between metals film and diamond substrate. © 1999 IEEE.
UR - https://www.scopus.com/pages/publications/85037538851
UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-85037538851&origin=recordpage
U2 - 10.1109/SIBCON.1999.771712
DO - 10.1109/SIBCON.1999.771712
M3 - RGC 32 - Refereed conference paper (with host publication)
SN - 078035172
SN - 9780780351721
VL - 2
T3 - 3rd International Symposium on Application of the Conversion Research Results for International Cooperation, SIBCONVERS 1999 - Proceedings
SP - 471
EP - 473
BT - 3rd International Symposium on Application of the Conversion Research Results for International Cooperation, SIBCONVERS 1999 - Proceedings
PB - IEEE
T2 - 3rd International Symposium on Application of the Conversion Research Results for International Cooperation, SIBCONVERS 1999
Y2 - 18 May 1999 through 20 May 1999
ER -