Compositional tuning of ferromagnetism in Ga1-xMnxP

R. Farshchi; M.A. Scarpulla; P.R. Stone; K.M. Yu; I.D. Sharp; J.W. Beeman; H.H. Silvestri; L.A. Reichertz; E.E. Haller; O.D. Dubon

doi:10.1016/j.ssc.2006.09.010

Compositional tuning of ferromagnetism in Ga1-xMnxP

R. Farshchi, M.A. Scarpulla, P.R. Stone, K.M. Yu, I.D. Sharp, J.W. Beeman, H.H. Silvestri, L.A. Reichertz, E.E. Haller, O.D. Dubon^*

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

10 Citations (Scopus)

Abstract

We report the magnetic and transport properties of Ga_1-xMn_xP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga_1-xMn_xAs, Ga_1-xMn_xP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 ^{{ring operator}}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga_1-xMn_xAs, Ga_1-xMn_xP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x. © 2006 Elsevier Ltd. All rights reserved.

Original language	English
Pages (from-to)	443-446
Journal	Solid State Communications
Volume	140
Issue number	9-10
DOIs	https://doi.org/10.1016/j.ssc.2006.09.010
Publication status	Published - Dec 2006
Externally published	Yes

Research Keywords

A. Ferromagnetic semiconductors
B. Laser processing
C. Impurities in semiconductors

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title = "Compositional tuning of ferromagnetism in Ga1-xMnxP",

abstract = "We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x. {\textcopyright} 2006 Elsevier Ltd. All rights reserved.",

keywords = "A. Ferromagnetic semiconductors, B. Laser processing, C. Impurities in semiconductors",

author = "R. Farshchi and M.A. Scarpulla and P.R. Stone and K.M. Yu and I.D. Sharp and J.W. Beeman and H.H. Silvestri and L.A. Reichertz and E.E. Haller and O.D. Dubon",

year = "2006",

month = dec,

doi = "10.1016/j.ssc.2006.09.010",

language = "English",

volume = "140",

pages = "443--446",

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TY - JOUR

T1 - Compositional tuning of ferromagnetism in Ga1-xMnxP

AU - Farshchi, R.

AU - Scarpulla, M.A.

AU - Stone, P.R.

AU - Yu, K.M.

AU - Sharp, I.D.

AU - Beeman, J.W.

AU - Silvestri, H.H.

AU - Reichertz, L.A.

AU - Haller, E.E.

AU - Dubon, O.D.

PY - 2006/12

Y1 - 2006/12

N2 - We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x. © 2006 Elsevier Ltd. All rights reserved.

AB - We report the magnetic and transport properties of Ga1-xMnxP synthesized via ion implantation followed by pulsed laser melting over a range of x, namely 0.018-0.042. Like Ga1-xMnxAs, Ga1-xMnxP displays a monotonic increase of the ferromagnetic Curie temperature with x associated with the hole-mediated ferromagnetic phase while thermal annealing above 300 {ring operator}C leads to a quenching of ferromagnetism that is accompanied by a reduction of the substitutional fraction of Mn. However, contrary to observations in Ga1-xMnxAs, Ga1-xMnxP is non-metallic over the entire composition range. At the lower temperatures over which the films are ferromagnetic, hole transport occurs via hopping conduction in a Mn-derived band; at higher temperatures it arises from holes in the valence band which are thermally excited across an energy gap that shrinks with x. © 2006 Elsevier Ltd. All rights reserved.

KW - A. Ferromagnetic semiconductors

KW - B. Laser processing

KW - C. Impurities in semiconductors

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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33750326201&origin=recordpage

U2 - 10.1016/j.ssc.2006.09.010

DO - 10.1016/j.ssc.2006.09.010

M3 - RGC 21 - Publication in refereed journal

SN - 0038-1098

VL - 140

SP - 443

EP - 446

JO - Solid State Communications

JF - Solid State Communications

IS - 9-10

ER -

Compositional tuning of ferromagnetism in Ga1-xMnxP

Abstract

Research Keywords

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