Compositional modulation in InxGa1-xN

Z. Liliental-Weber; D. N. Zakharov; K. M. Yu; J. W. Ager III; W. Walukiewicz; E. E. Haller; H. Lu; W. J. Schaff

doi:10.1016/j.physb.2005.12.120

Compositional modulation in InxGa1-xN

Z. Liliental-Weber^*
, D. N. Zakharov
, K. M. Yu
, J. W. Ager III
, W. Walukiewicz
, E. E. Haller
, H. Lu
, W. J. Schaff

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

18 Citations (Scopus)

Abstract

Transmission electron microscopy and X-ray diffraction were used to study compositional modulation in InxGa1-xN layers grown with compositions close to the miscibility gap. The samples (0.34

Original language	English
Pages (from-to)	468-472
Journal	Physica B: Condensed Matter
Volume	376-377
Issue number	1
DOIs	https://doi.org/10.1016/j.physb.2005.12.120
Publication status	Published - 1 Apr 2006
Externally published	Yes
Event	Proceedings of the 23rd International Conference on Defects in Semiconductors - Duration: 24 Jul 2005 → 29 Jul 2005

Research Keywords

Compositional modulation
InGaN
TEM
X-ray

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10.1016/j.physb.2005.12.120

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@article{a4fd0ff495b24d27a2c696cb1a86157e,

title = "Compositional modulation in InxGa1-xN",

abstract = "Transmission electron microscopy and X-ray diffraction were used to study compositional modulation in InxGa1-xN layers grown with compositions close to the miscibility gap. The samples (0.34",

keywords = "Compositional modulation, InGaN, TEM, X-ray",

author = "Z. Liliental-Weber and Zakharov, \{D. N.\} and Yu, \{K. M.\} and \{Ager III\}, \{J. W.\} and W. Walukiewicz and Haller, \{E. E.\} and H. Lu and Schaff, \{W. J.\}",

year = "2006",

month = apr,

day = "1",

doi = "10.1016/j.physb.2005.12.120",

language = "English",

volume = "376-377",

pages = "468--472",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier B.V.",

number = "1",

note = "Proceedings of the 23rd International Conference on Defects in Semiconductors ; Conference date: 24-07-2005 Through 29-07-2005",

}

TY - JOUR

T1 - Compositional modulation in InxGa1-xN

AU - Liliental-Weber, Z.

AU - Zakharov, D. N.

AU - Yu, K. M.

AU - Ager III, J. W.

AU - Walukiewicz, W.

AU - Haller, E. E.

AU - Lu, H.

AU - Schaff, W. J.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - Transmission electron microscopy and X-ray diffraction were used to study compositional modulation in InxGa1-xN layers grown with compositions close to the miscibility gap. The samples (0.34

AB - Transmission electron microscopy and X-ray diffraction were used to study compositional modulation in InxGa1-xN layers grown with compositions close to the miscibility gap. The samples (0.34

KW - Compositional modulation

KW - InGaN

KW - TEM

KW - X-ray

UR - https://www.scopus.com/pages/publications/33645158810

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-33645158810&origin=recordpage

U2 - 10.1016/j.physb.2005.12.120

DO - 10.1016/j.physb.2005.12.120

M3 - RGC 21 - Publication in refereed journal

SN - 0921-4526

VL - 376-377

SP - 468

EP - 472

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

IS - 1

T2 - Proceedings of the 23rd International Conference on Defects in Semiconductors

Y2 - 24 July 2005 through 29 July 2005

ER -

Compositional modulation in InxGa1-xN

Abstract

Research Keywords

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