Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, <111>-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Zai-Xing Yang
  • Lizhe Liu
  • Ning Han
  • Tak Fu Hung
  • Xinglong Wu
  • Aimin Song
  • Johnny C. Ho

Detail(s)

Original languageEnglish
Pages (from-to)4237-4246
Journal / PublicationACS Nano
Volume11
Issue number4
Online published29 Mar 2017
Publication statusPublished - 25 Apr 2017

Abstract

Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility <111>-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4 catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4 was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in <111> orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2 V-1 s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018 cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.

Research Area(s)

  • GaSb nanowires, growth orientation, high mobility, in-plane lattice mismatch, interface plane orientation, vapor-solid-solid

Citation Format(s)

Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, <111>-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition. / Yang, Zai-Xing; Liu, Lizhe; Yip, Senpo et al.

In: ACS Nano, Vol. 11, No. 4, 25.04.2017, p. 4237-4246.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review