Competitive conductive mechanism of interstitial Ag and oxygen vacancies in Ag/Ta2O5/Pt stack

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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Author(s)

  • Qi Hu
  • Zhiqiang Fan
  • Anping Huang
  • Xinjiang Zhang
  • Rumeng Zhao
  • Qin Gao
  • Yuhang Ji
  • Wenzhen Dou
  • Mei Wang
  • Hongliang Shi
  • Zhisong Xiao
  • Xiangwei Jiang

Detail(s)

Original languageEnglish
Article number065104
Journal / PublicationJournal of Applied Physics
Volume126
Issue number6
Online published13 Aug 2019
Publication statusPublished - 14 Aug 2019

Link(s)

Abstract

The transport properties of Ag/Ta2O5/Pt with coexisting interstitial Ag and oxygen vacancies are examined by density-functional theory and nonequilibrium Green's function calculation. The results show that the coexistence of interstitial Ag and oxygen vacancies results in a reduced transmission coefficient, implying an antagonistic interaction between Ag and oxygen vacancies. Interstitial Ag atoms may take the position of oxygen vacancies and block the oxygen vacancy channel. Alternatively, oxygen vacancies attract electrons from nearby Ag channels thereby reducing the conductance. By comparing the different dual-component channels, it is found that Ag and oxygen vacancies tend to form a complete oxygen vacancy channel with a few Ag atoms giving rise to higher conductance. Our calculation reveals a competitive conductive mechanism of interstitial Ag and oxygen vacancies and a promising strategy to investigate multicomponent channels and improve the design of future synaptic devices.

Research Area(s)

Citation Format(s)

Competitive conductive mechanism of interstitial Ag and oxygen vacancies in Ag/Ta2O5/Pt stack. / Hu, Qi; Fan, Zhiqiang; Huang, Anping et al.
In: Journal of Applied Physics, Vol. 126, No. 6, 065104, 14.08.2019.

Research output: Journal Publications and ReviewsRGC 21 - Publication in refereed journalpeer-review

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