Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel

I. Boerasu; L. Pintilie; M. Pereira; M. I. Vasilevskiy; M. J M Gomes

doi:10.1063/1.1562009

Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel

I. Boerasu, L. Pintilie, M. Pereira, M. I. Vasilevskiy, M. J M Gomes

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

102 Citations (Scopus)

Abstract

The ferroelectric and semiconductor properties in Pb(Zr_0.65Ti_0.35)O₃ thin films deposited by sol-gel were investigated. The average remnant polarization of 9 μC/cm² and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. The results showed that the semiconductor properties of the films were not negligible and in certain conditions were dominant over the ferrielectric properties.

Original language	English
Pages (from-to)	4776-4783
Journal	Journal of Applied Physics
Volume	93
Issue number	8
DOIs	https://doi.org/10.1063/1.1562009
Publication status	Published - 15 Apr 2003
Externally published	Yes

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title = "Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel",

abstract = "The ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel were investigated. The average remnant polarization of 9 μC/cm2 and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. The results showed that the semiconductor properties of the films were not negligible and in certain conditions were dominant over the ferrielectric properties.",

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AU - Boerasu, I.

AU - Pintilie, L.

AU - Pereira, M.

AU - Vasilevskiy, M. I.

AU - Gomes, M. J M

PY - 2003/4/15

Y1 - 2003/4/15

N2 - The ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel were investigated. The average remnant polarization of 9 μC/cm2 and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. The results showed that the semiconductor properties of the films were not negligible and in certain conditions were dominant over the ferrielectric properties.

AB - The ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel were investigated. The average remnant polarization of 9 μC/cm2 and the coercive field of 39 kV/cm were obtained from the hysteresis loop measurements. The results showed that the semiconductor properties of the films were not negligible and in certain conditions were dominant over the ferrielectric properties.

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M3 - RGC 21 - Publication in refereed journal

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Competition between ferroelectric and semiconductor properties in Pb(Zr0.65Ti0.35)O3 thin films deposited by sol-gel

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