Compensation-dependence of magnetic and electrical properties in Ga1- x Mnx P

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • T. E. Winkler
  • P. R. Stone
  • Tian Li
  • A. Bonanni
  • O. D. Dubon

Detail(s)

Original languageEnglish
Article number12103
Journal / PublicationApplied Physics Letters
Volume98
Issue number1
Publication statusPublished - 3 Jan 2011
Externally publishedYes

Abstract

We demonstrate the control of the hole concentration in Ga1-x Mnx P over a wide range by introducing compensating vacancies. The resulting evolution of the Curie temperature from 51 to 7.5 K is remarkably similar to that observed in Ga1-x Mnx As despite the dramatically different character of hole transport between the two material systems. The highly localized nature of holes in Ga1-x Mnx P is reflected in the accompanying increase in resistivity by many orders of magnitude. Based on variable-temperature resistivity data we present a general picture for hole conduction in which variable-range hopping is the dominant transport mechanism in the presence of compensation. © 2011 American Institute of Physics.

Citation Format(s)

Compensation-dependence of magnetic and electrical properties in Ga1- x Mnx P. / Winkler, T. E.; Stone, P. R.; Li, Tian; Yu, K. M.; Bonanni, A.; Dubon, O. D.

In: Applied Physics Letters, Vol. 98, No. 1, 12103, 03.01.2011.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review