Comparison of SiC voltage source inverters using synchronous rectification and freewheeling diode

Shan Yin; Yitao Liu; Yong Liu; King Jet Tseng; Josep Pou; Rejeki Simanjorang

doi:10.1109/TIE.2017.2733483

Comparison of SiC voltage source inverters using synchronous rectification and freewheeling diode

Shan Yin^*, Yitao Liu, Yong Liu, King Jet Tseng, Josep Pou, Rejeki Simanjorang

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

82 Citations (Scopus)

Abstract

For power converters with inductive loads, a freewheeling path is needed for the current due to reactive power. The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC MOSFET exhibits a high voltage drop. Hence, an antiparallel SiC Schottky diode is normally implemented to eliminate its conduction. However, the external SiC Schottky diode is not fully utilized as it only works during the dead time. In this paper, the hard-switching SR is investigated in an SiC three-phase inverter and compared with a conventional inverter using freewheeling diode (FWD). An improved power loss model for the two inverters has been developed. It is found that the inverter using SR has higher efficiency due to the smaller switching loss. A 7-kW prototype of SiC three-phase inverter is built, which achieves a peak efficiency of 98.8% (±0.15%) and 98.5% (±0.15%) at 40 kHz using SR and FWD, respectively. This paper confirms that the SiC MOSFET is an ideal candidate for the SR. © 2017 IEEE.

Original language	English
Article number	2733483
Pages (from-to)	1051-1061
Journal	IEEE Transactions on Industrial Electronics
Volume	65
Issue number	2
DOIs	https://doi.org/10.1109/TIE.2017.2733483
Publication status	Published - 29 Jul 2017
Externally published	Yes

Bibliographical note

Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].

Funding

Manuscript received March 4, 2017; revised May 21, 2017 and May 31, 2017; accepted June 12, 2017. Date of publication July 31, 2017; date of current version December 8, 2017. This work was conducted within the Rolls-Royce@NTU Corporate Lab with support from the National Research Foundation (NRF) Singapore under the Corp Lab@University Scheme. (Corresponding author: Shan Yin.) S. Yin was with the Rolls-Royce@NTU Corporate Lab, Nanyang Technological University, Singapore 639798. He is now with the Microsystem and Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China (e-mail: [email protected]).

Research Keywords

Body diode
Efficiency
Inverter
Silicon carbide (SiC) MOSFET
Synchronous rectification (SR)

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abstract = "For power converters with inductive loads, a freewheeling path is needed for the current due to reactive power. The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC MOSFET exhibits a high voltage drop. Hence, an antiparallel SiC Schottky diode is normally implemented to eliminate its conduction. However, the external SiC Schottky diode is not fully utilized as it only works during the dead time. In this paper, the hard-switching SR is investigated in an SiC three-phase inverter and compared with a conventional inverter using freewheeling diode (FWD). An improved power loss model for the two inverters has been developed. It is found that the inverter using SR has higher efficiency due to the smaller switching loss. A 7-kW prototype of SiC three-phase inverter is built, which achieves a peak efficiency of 98.8% (±0.15%) and 98.5% (±0.15%) at 40 kHz using SR and FWD, respectively. This paper confirms that the SiC MOSFET is an ideal candidate for the SR. {\textcopyright} 2017 IEEE.",

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AU - Simanjorang, Rejeki

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AB - For power converters with inductive loads, a freewheeling path is needed for the current due to reactive power. The MOSFET synchronous rectification (SR) is widely used to reduce the conduction loss during the freewheeling period. Due to the wide band gap of silicon carbide (SiC), the intrinsic body diode of SiC MOSFET exhibits a high voltage drop. Hence, an antiparallel SiC Schottky diode is normally implemented to eliminate its conduction. However, the external SiC Schottky diode is not fully utilized as it only works during the dead time. In this paper, the hard-switching SR is investigated in an SiC three-phase inverter and compared with a conventional inverter using freewheeling diode (FWD). An improved power loss model for the two inverters has been developed. It is found that the inverter using SR has higher efficiency due to the smaller switching loss. A 7-kW prototype of SiC three-phase inverter is built, which achieves a peak efficiency of 98.8% (±0.15%) and 98.5% (±0.15%) at 40 kHz using SR and FWD, respectively. This paper confirms that the SiC MOSFET is an ideal candidate for the SR. © 2017 IEEE.

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Comparison of SiC voltage source inverters using synchronous rectification and freewheeling diode

Abstract

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