Comparative study of the dissolution kinetics of electrolytic Ni and electroless Ni-P by the molten Sn3.5Ag0.5Cu solder alloy

Lead-free solders have high Sn content and high melting temperature, which often cause excessive interfacial reactions at the interface. Sn3.5Ag0.5Cu lead-free solder alloy has been used to identify its interfacial reactions with two-metal layer flexible substrates. In this paper we investigate the dissolution kinetics of Sn3.5Ag0.5Cu solder on electrolytic Ni/electroless NiP layer. It is found that during 1 min of reflow electroless NiP layer dissolves slightly lower than the electrolytic Ni due to the barrier layer formation between the intermetallic compounds (IMCs) and electroless NiP layer. Faster nucleation of IMCs on the electrolytic Ni layer is proposed as the main reason for higher initial dissolution. The appearance of P-rich Ni layer acts as a diffusion barrier layer between the solder and electroless NiP layer, which decreases the dissolution rate and IMCs growth rate than that of the electrolytic Ni layer, but weaken the interface and reduces the ball shear strength and reliability. After acquiring certain thickness P-rich Ni layer breaks and increases the diffusion rate of Sn and as a consequence both the IMCs growth rate and dissolution rate also increases. It is found that 3 μm thick electroless NiP layer cannot protect the Cu layer for more than 120 min at 250 °C. In electrolytic Ni shear strength does not change significantly and lower dissolution rate and more protective for Cu layer during long time molten reaction. © 2003 Elsevier Ltd. All rights reserved.