Abstract
A simple model of a layered heterostructure was developed in order to simultaneously compute and compare resonant and sequential electron field emission currents. Among other results obtained, it was found that, while various slope changes appear in both current-field characteristics, for the sequential tunneling type of emission the effect is merely a consequence of different field sensitivity of the potential barriers involved in the structure.
| Original language | English |
|---|---|
| Title of host publication | TECHNICAL DIGEST : 28th International Vacuum Nanoelectronics Conference, IVNC 2015 |
| Editors | Shaozhi Deng, Juncong She, Jun Chen Chen, Qionghui Zou, Peng Ye |
| Publisher | IEEE |
| Pages | 48-49 |
| ISBN (Print) | 9781467393577 |
| DOIs | |
| Publication status | Published - Jul 2015 |
| Externally published | Yes |
| Event | 28th International Vacuum Nanoelectronics Conference (IVNC 2015) - Sun Yat-Sen University, Guangzhou, China Duration: 13 Jul 2015 → 17 Jul 2015 |
Conference
| Conference | 28th International Vacuum Nanoelectronics Conference (IVNC 2015) |
|---|---|
| Place | China |
| City | Guangzhou |
| Period | 13/07/15 → 17/07/15 |
Research Keywords
- electron field emission
- layered heterostructure
- resonant tunneling
- sequential tunneling
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