Compact modeling of sectorial split-drain magnetic field-effect transistors

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Original languageEnglish
Pages (from-to)68-72
Journal / PublicationVacuum
Volume167
Online published31 May 2019
Publication statusPublished - Sep 2019

Abstract

Split-drain magnetic field-effect transistor (SD-MAGFET), having the key advantage of possible system integration with the mainstream CMOS technology, should be one of the key technological options for achieving better human and environmental interfacing of digital products as proposed in the More-than-Moore paradigm. However, the characteristics, the potential, and the design methodologies of this new device structure have not fully explored yet. By introducing the effective channel width concept and basing on the first principle of charge transport, we conducted a compact modeling on the magnetic sensitivity of sectorial split-drain MAGFET (SSD-MAGFET). Our model provides some intuitive views on the effects of the devices parameters, such as the sectorial angle, gap width between the two drains, effective aspect ratio, on the operation range and magnetic sensitivity. The model agrees well with the experimental results and suggests that the sensitivity-B field relationship could be approximated by two piecewise linear regions according to the field strength and there exists an optimal sector angle which is governed by the gap width and effective aspect ratio of the SSD-MAGFET.