TY - JOUR
T1 - Common structure in amorphised compound semiconductors
AU - Ridgway, M. C.
AU - Azevedo, G. D M
AU - Glover, C. J.
AU - Yu, K. M.
AU - Foran, G. J.
PY - 2003/1
Y1 - 2003/1
N2 - Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised ∼18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. © 2002 Elsevier Science B.V. All rights reserved.
AB - Extended X-ray absorption fine structure has been utilised to determine the structural parameters of the amorphous III-V semiconductors GaP, GaAs, InP and InAs. The amorphous phase was formed by ion implantation to inhibit preparation-specific artefacts associated with the alternative fabrication techniques of sputtering and evaporation. Relative to crystalline standards, increases in bond length and Debye-Waller factor were apparent for all materials with a slight reduction in coordination number (3.8-4 atoms). Similarly, homopolar bonding in the amorphous phase was measurable for all materials. For example, In-In bonding in amorphous InP comprised ∼18% of the total In bonds and demonstrated the necessity of a ring distribution containing both even and odd members. © 2002 Elsevier Science B.V. All rights reserved.
KW - Amorphous compound semiconductors
KW - Ion implantation
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UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0-0037237788&origin=recordpage
U2 - 10.1016/S0168-583X(02)01531-8
DO - 10.1016/S0168-583X(02)01531-8
M3 - RGC 21 - Publication in refereed journal
SN - 0168-583X
VL - 199
SP - 235
EP - 239
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
ER -