Combined post-modification of iodide ligands and wide band gap ZnS in quantum dot sensitized solar cells

Guangda Niu; Nan Li; Liduo Wang; Wenzhe Li; Yong Qiu

doi:10.1039/c4cp02520b

Combined post-modification of iodide ligands and wide band gap ZnS in quantum dot sensitized solar cells

Guangda Niu
, Nan Li
, Liduo Wang^*
, Wenzhe Li
, Yong Qiu

^*Corresponding author for this work

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

12 Citations (Scopus)

Abstract

Combined post-modification strategy of iodide ligands and wide band gap ZnS layer were employed in quantum dot sensitized solar cells. J-V curves show that the combined post-modification could improve the photoconversion efficiency compared to the single post-modification of ZnS because of the more effective passivation. CdS-sensitized and CdS/CdSe-co-sensitized solar cells both reveal that the assembly structure of QDs/I^-/ZnS is more beneficial for the efficiency of solar cells than that of QDs/ZnS/I^-. EIS results show that the former structure exhibit higher interface resistance and could suppress electron recombination more powerfully. XPS results reveal that the iodide ligands have different binding energy, which indicates a different coordination state of the iodide atom in these two structures. Finally, 3.28% efficiency and 18.16 mA cm^-2 were achieved for CdS/CdSe QDSCs by applying this combined post-modification.

© the Owner Societies 2014

Original language	English
Pages (from-to)	18327-18332
Number of pages	6
Journal	Physical Chemistry Chemical Physics
Volume	16
Issue number	34
Online published	11 Jul 2014
DOIs	https://doi.org/10.1039/c4cp02520b
Publication status	Published - 14 Sept 2014
Externally published	Yes

Funding

This work was supported by the National Natural Science Foundation of China under Grant No. 51273104 and the National Key Basic Research and Development Program of China under Grant No. 2009CB930602.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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title = "Combined post-modification of iodide ligands and wide band gap ZnS in quantum dot sensitized solar cells",

abstract = "Combined post-modification strategy of iodide ligands and wide band gap ZnS layer were employed in quantum dot sensitized solar cells. J-V curves show that the combined post-modification could improve the photoconversion efficiency compared to the single post-modification of ZnS because of the more effective passivation. CdS-sensitized and CdS/CdSe-co-sensitized solar cells both reveal that the assembly structure of QDs/I-/ZnS is more beneficial for the efficiency of solar cells than that of QDs/ZnS/I-. EIS results show that the former structure exhibit higher interface resistance and could suppress electron recombination more powerfully. XPS results reveal that the iodide ligands have different binding energy, which indicates a different coordination state of the iodide atom in these two structures. Finally, 3.28\% efficiency and 18.16 mA cm-2 were achieved for CdS/CdSe QDSCs by applying this combined post-modification. {\textcopyright} the Owner Societies 2014 ",

author = "Guangda Niu and Nan Li and Liduo Wang and Wenzhe Li and Yong Qiu",

year = "2014",

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doi = "10.1039/c4cp02520b",

language = "English",

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TY - JOUR

T1 - Combined post-modification of iodide ligands and wide band gap ZnS in quantum dot sensitized solar cells

AU - Niu, Guangda

AU - Li, Nan

AU - Wang, Liduo

AU - Li, Wenzhe

AU - Qiu, Yong

PY - 2014/9/14

Y1 - 2014/9/14

N2 - Combined post-modification strategy of iodide ligands and wide band gap ZnS layer were employed in quantum dot sensitized solar cells. J-V curves show that the combined post-modification could improve the photoconversion efficiency compared to the single post-modification of ZnS because of the more effective passivation. CdS-sensitized and CdS/CdSe-co-sensitized solar cells both reveal that the assembly structure of QDs/I-/ZnS is more beneficial for the efficiency of solar cells than that of QDs/ZnS/I-. EIS results show that the former structure exhibit higher interface resistance and could suppress electron recombination more powerfully. XPS results reveal that the iodide ligands have different binding energy, which indicates a different coordination state of the iodide atom in these two structures. Finally, 3.28% efficiency and 18.16 mA cm-2 were achieved for CdS/CdSe QDSCs by applying this combined post-modification. © the Owner Societies 2014

AB - Combined post-modification strategy of iodide ligands and wide band gap ZnS layer were employed in quantum dot sensitized solar cells. J-V curves show that the combined post-modification could improve the photoconversion efficiency compared to the single post-modification of ZnS because of the more effective passivation. CdS-sensitized and CdS/CdSe-co-sensitized solar cells both reveal that the assembly structure of QDs/I-/ZnS is more beneficial for the efficiency of solar cells than that of QDs/ZnS/I-. EIS results show that the former structure exhibit higher interface resistance and could suppress electron recombination more powerfully. XPS results reveal that the iodide ligands have different binding energy, which indicates a different coordination state of the iodide atom in these two structures. Finally, 3.28% efficiency and 18.16 mA cm-2 were achieved for CdS/CdSe QDSCs by applying this combined post-modification. © the Owner Societies 2014

UR - https://www.scopus.com/pages/publications/84905861402

UR - https://www.scopus.com/record/pubmetrics.uri?eid=2-s2.0- 84905861402&origin=recordpage

U2 - 10.1039/c4cp02520b

DO - 10.1039/c4cp02520b

M3 - RGC 21 - Publication in refereed journal

AN - SCOPUS:84905861402

SN - 1463-9076

VL - 16

SP - 18327

EP - 18332

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

IS - 34

ER -

Combined post-modification of iodide ligands and wide band gap ZnS in quantum dot sensitized solar cells

Abstract

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