Cl-doping in highly mismatched ZnTe1-xOx alloys for intermediate band solar cells

T. Tanaka; S. Tsutsumi; Y. Okano; K. Saito; Q. Guo; M. Nishio; K. M. Yu; W. Walukiewicz

doi:10.1109/PVSC.2016.7750169

Cl-doping in highly mismatched ZnTe_1-xO_x alloys for intermediate band solar cells

T. Tanaka, S. Tsutsumi, Y. Okano, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

2 Citations (Scopus)

Abstract

We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl₂ as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E₊ and E_- bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.

Original language	English
Title of host publication	Conference Record of the IEEE Photovoltaic Specialists Conference
Publisher	IEEE
Pages	2830-2832
Volume	2016-November
ISBN (Print)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7750169
Publication status	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Place	United States
City	Portland
Period	5/06/16 → 10/06/16

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SDG 7 Affordable and Clean Energy

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Cite this

@inproceedings{4eb2504ce3414dfa827ef3220ae2a407,

title = "Cl-doping in highly mismatched ZnTe1-xOx alloys for intermediate band solar cells",

abstract = "We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2 as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E+ and E- bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.",

author = "T. Tanaka and S. Tsutsumi and Y. Okano and K. Saito and Q. Guo and M. Nishio and Yu, {K. M.} and W. Walukiewicz",

year = "2016",

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volume = "2016-November",

publisher = "IEEE",

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Tanaka, T, Tsutsumi, S, Okano, Y, Saito, K, Guo, Q, Nishio, M, Yu, KM & Walukiewicz, W 2016, Cl-doping in highly mismatched ZnTe_1-xO_x alloys for intermediate band solar cells. in Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 2016-November, 7750169, IEEE, pp. 2830-2832, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7750169

Cl-doping in highly mismatched ZnTe_1-xO_x alloys for intermediate band solar cells. / Tanaka, T.; Tsutsumi, S.; Okano, Y. et al.
Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 2016-November IEEE, 2016. p. 2830-2832 7750169.

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

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AU - Tanaka, T.

AU - Tsutsumi, S.

AU - Okano, Y.

AU - Saito, K.

AU - Guo, Q.

AU - Nishio, M.

AU - Yu, K. M.

AU - Walukiewicz, W.

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N2 - We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2 as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E+ and E- bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.

AB - We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2 as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E+ and E- bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.

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