Cl-doping in Highly Mismatched ZnTe1-xOx Alloys for Intermediate Band Solar Cells

T. Tanaka; S. Tsutsumi; Y. Okano; K. Saito; Q. Guo; M. Nishio; K. M. Yu; W. Walukiewicz

doi:10.1109/PVSC.2017.8366661

Cl-doping in Highly Mismatched ZnTe_1-xO_x Alloys for Intermediate Band Solar Cells

T. Tanaka, S. Tsutsumi, Y. Okano, K. Saito, Q. Guo, M. Nishio, K. M. Yu, W. Walukiewicz

Research output: Chapters, Conference Papers, Creative and Literary Works › RGC 32 - Refereed conference paper (with host publication) › peer-review

Abstract

We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl₂ as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl₂ cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E₊ and E. bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)
Publisher	IEEE
Pages	1-3
ISBN (Print)	9781509056057, 9781509056064
DOIs	https://doi.org/10.1109/PVSC.2017.8366661
Publication status	Published - Jun 2017
Event	44th IEEE Photovoltaic Specialist Conference (PVSC-44) - Washington Marriott Wardman Park, Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference (PVSC-44)
Place	United States
City	Washington
Period	25/06/17 → 30/06/17

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@inproceedings{2cc203554bed4d8aab168657782044f2,

title = "Cl-doping in Highly Mismatched ZnTe1-xOx Alloys for Intermediate Band Solar Cells",

abstract = "We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2 as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E+ and E. bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.",

author = "T. Tanaka and S. Tsutsumi and Y. Okano and K. Saito and Q. Guo and M. Nishio and Yu, {K. M.} and W. Walukiewicz",

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language = "English",

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booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference (PVSC)",

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note = "44th IEEE Photovoltaic Specialist Conference (PVSC-44) ; Conference date: 25-06-2017 Through 30-06-2017",

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Tanaka, T, Tsutsumi, S, Okano, Y, Saito, K, Guo, Q, Nishio, M, Yu, KM & Walukiewicz, W 2017, Cl-doping in Highly Mismatched ZnTe_1-xO_x Alloys for Intermediate Band Solar Cells. in 2017 IEEE 44th Photovoltaic Specialist Conference (PVSC). IEEE, pp. 1-3, 44th IEEE Photovoltaic Specialist Conference (PVSC-44), Washington, District of Columbia, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366661

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T1 - Cl-doping in Highly Mismatched ZnTe1-xOx Alloys for Intermediate Band Solar Cells

AU - Tanaka, T.

AU - Tsutsumi, S.

AU - Okano, Y.

AU - Saito, K.

AU - Guo, Q.

AU - Nishio, M.

AU - Yu, K. M.

AU - Walukiewicz, W.

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N2 - We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2 as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E+ and E. bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.

AB - We report the effect of Cl-doping in highly mismatched ZnTeO alloys grown on ZnTe substrate by molecular beam epitaxy using ZnCl2 as a dopant source in order to introduce electrons into the intermediate band of ZnTeO that is required to be half-filled with electrons for the efficient operation of an intermediate band solar cell. The ZnCl2 cell temperature was varied between 70 and 250 °C. In order to characterize the photoluminescence (PL) properties exactly, the temperature dependence of band gap energies for E+ and E. bands of ZnTeO was first determined by photoreflectance measurements. Changes in band gap energies were found to be in accordance with those expected by the band anticrossing model. In the low temperature PL spectra, a donor-acceptor pair emission was found, indicating the formation of Cl-related donors.

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