Circular etch pits in ion-implanted amorphous silicon films

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

Detail(s)

Original languageEnglish
Pages (from-to)274-275
Journal / PublicationApplied Physics Letters
Volume22
Issue number6
Publication statusPublished - 1973
Externally publishedYes

Abstract

Using a dilute HF solution as the etchant, we found very different etching behaviors between amorphous silicon films prepared by vapor deposition and by ion implantation. The latter are etched preferentially forming circular pits on the surface, but not the former. However, when the evaporated films were subjected to high dosages of ion bombardment and followed by etching, the same kind of circular pits were observed. We conclude that the bombardment of ions can cause weak spots on the amorphous Si surface which possess low resistance to the etching. © 1973 American Institute of Physics.

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Citation Format(s)

Circular etch pits in ion-implanted amorphous silicon films. / Tu, K. N.; Tan, S. I.; Crowder, B. L.

In: Applied Physics Letters, Vol. 22, No. 6, 1973, p. 274-275.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review