TY - JOUR
T1 - Circular etch pits in ion-implanted amorphous silicon films
AU - Tu, K. N.
AU - Tan, S. I.
AU - Crowder, B. L.
N1 - Publication details (e.g. title, author(s), publication statuses and dates) are captured on an “AS IS” and “AS AVAILABLE” basis at the time of record harvesting from the data source. Suggestions for further amendments or supplementary information can be sent to [email protected].
PY - 1973
Y1 - 1973
N2 - Using a dilute HF solution as the etchant, we found very different etching behaviors between amorphous silicon films prepared by vapor deposition and by ion implantation. The latter are etched preferentially forming circular pits on the surface, but not the former. However, when the evaporated films were subjected to high dosages of ion bombardment and followed by etching, the same kind of circular pits were observed. We conclude that the bombardment of ions can cause weak spots on the amorphous Si surface which possess low resistance to the etching. © 1973 American Institute of Physics.
AB - Using a dilute HF solution as the etchant, we found very different etching behaviors between amorphous silicon films prepared by vapor deposition and by ion implantation. The latter are etched preferentially forming circular pits on the surface, but not the former. However, when the evaporated films were subjected to high dosages of ion bombardment and followed by etching, the same kind of circular pits were observed. We conclude that the bombardment of ions can cause weak spots on the amorphous Si surface which possess low resistance to the etching. © 1973 American Institute of Physics.
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U2 - 10.1063/1.1654636
DO - 10.1063/1.1654636
M3 - RGC 21 - Publication in refereed journal
SN - 0003-6951
VL - 22
SP - 274
EP - 275
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 6
ER -