[CH3(CH2)11NH3]SnI 3: A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers

Zhengtao Xu; David B. Mitzi

doi:10.1021/ic0347081

[CH₃(CH₂)₁₁NH₃]SnI ₃: A Hybrid Semiconductor with MoO₃-type Tin(II) Iodide Layers

Zhengtao Xu, David B. Mitzi

Research output: Journal Publications and Reviews › RGC 21 - Publication in refereed journal › peer-review

71 Citations (Scopus)

Abstract

The organic-inorganic hybrid [CH₃(CH₂) ₁₁NH₃]SnI₃ presents a lamellar structure with a Sn-I framework isotypic to that of MoO₃. The SnI₃ ^- layer consists of edge and corner-sharing SnI₆ octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3. 62 Å), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI₄ ^2--based perovskite semiconductors, such as [CH ₃(CH₂)₁₁NH₃]₂SnI ₄, with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

Original language	English
Pages (from-to)	6589-6591
Journal	Inorganic Chemistry
Volume	42
Issue number	21
DOIs	https://doi.org/10.1021/ic0347081
Publication status	Published - 20 Oct 2003
Externally published	Yes

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@article{cca518c84e5e4e009876d4317254ef43,

title = "[CH3(CH2)11NH3]SnI 3: A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers",

abstract = "The organic-inorganic hybrid [CH3(CH2) 11NH3]SnI3 presents a lamellar structure with a Sn-I framework isotypic to that of MoO3. The SnI3 - layer consists of edge and corner-sharing SnI6 octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3. 62 {\AA}), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI4 2--based perovskite semiconductors, such as [CH 3(CH2)11NH3]2SnI 4, with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.",

author = "Zhengtao Xu and Mitzi, {David B.}",

year = "2003",

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TY - JOUR

T1 - [CH3(CH2)11NH3]SnI 3

T2 - A Hybrid Semiconductor with MoO3-type Tin(II) Iodide Layers

AU - Xu, Zhengtao

AU - Mitzi, David B.

PY - 2003/10/20

Y1 - 2003/10/20

N2 - The organic-inorganic hybrid [CH3(CH2) 11NH3]SnI3 presents a lamellar structure with a Sn-I framework isotypic to that of MoO3. The SnI3 - layer consists of edge and corner-sharing SnI6 octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3. 62 Å), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI4 2--based perovskite semiconductors, such as [CH 3(CH2)11NH3]2SnI 4, with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

AB - The organic-inorganic hybrid [CH3(CH2) 11NH3]SnI3 presents a lamellar structure with a Sn-I framework isotypic to that of MoO3. The SnI3 - layer consists of edge and corner-sharing SnI6 octahedra in which one of the six Sn-I bonds is distinctly elongated (e.g., 3. 62 Å), indicating lone-pair stereoactivity for the Sn(II) atom. The overall electronic character remains comparable with that of the well-studied SnI4 2--based perovskite semiconductors, such as [CH 3(CH2)11NH3]2SnI 4, with a red-shifted and broadened exciton peak associated with the band gap, apparently due to the increased dimensionality of the Sn-I framework. The title compound offers, aside from the hybrid perovskites, a new type of solution-processable Sn-I network for potential applications in semiconductive devices.

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DO - 10.1021/ic0347081

M3 - RGC 21 - Publication in refereed journal

SN - 0020-1669

VL - 42

SP - 6589

EP - 6591

JO - Inorganic Chemistry

JF - Inorganic Chemistry

IS - 21

ER -