Chemistry of silicon oxide annealed in ammonia

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal

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Detail(s)

Original languageEnglish
Pages (from-to)49-54
Journal / PublicationApplied Surface Science
Volume72
Issue number1
Publication statusPublished - Sep 1993

Abstract

This paper presents some qualitative correlations among the chemical contents in thermal oxynitride and re-oxidized oxynitride films. By performing Auger electron spectroscopy, infrared absorption measurements and analyses of the chemical composition of the thin films, mechanisms of the chemical reactions during the thermal nitridation are proposed. For the thermal nitridation of silicon oxide in ammonia four different mechanisms exist: (a) an oxidizing reaction at the Si/SiO2 interface at an early stage of nitridation; (2) a replacement reaction at the interface for prolonged nitridation; (3) a replacement reaction in the bulk oxide; (4) cross-linking reactions for heavy nitridation or post-nitridation in inert ambient. © 1993.

Citation Format(s)

Chemistry of silicon oxide annealed in ammonia. / Wong, H.; Yang, B. L.; Cheng, Y. C.

In: Applied Surface Science, Vol. 72, No. 1, 09.1993, p. 49-54.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journal