Chemiresistive response of silicon nanowires to trace vapor of nitro explosives

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review

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Author(s)

  • Danling Wang
  • Haishan Sun
  • Antao Chen
  • Sei-Hum Jang
  • Attila Szep

Detail(s)

Original languageEnglish
Pages (from-to)2628-2632
Journal / PublicationNanoscale
Volume4
Issue number8
Publication statusPublished - 21 Apr 2012
Externally publishedYes

Abstract

Silicon nanowires are observed to behave as chemically modulated resistors and exhibit sensitive and fast electrical responses to vapors of common nitro explosives and their degradation by-products. The nanowires were prepared with a top-down nano-fabrication process on a silicon-on-insulator wafer. The surface of the silicon nanowires was modified by plasma treatments. Both hydrogen and oxygen plasma treatments can significantly improve the responses, and oxygen plasma changes the majority carrier from p- to n-type on the surface of silicon nanowire thin films. The sensitivity is found to increase when the cross-section of the nanowires decreases. © 2012 The Royal Society of Chemistry.

Citation Format(s)

Chemiresistive response of silicon nanowires to trace vapor of nitro explosives. / Wang, Danling; Sun, Haishan; Chen, Antao; Jang, Sei-Hum; Jen, Alex K.-Y.; Szep, Attila.

In: Nanoscale, Vol. 4, No. 8, 21.04.2012, p. 2628-2632.

Research output: Journal Publications and Reviews (RGC: 21, 22, 62)21_Publication in refereed journalpeer-review